Allicdata Part #: | AUIRFR5305-ND |
Manufacturer Part#: |
AUIRFR5305 |
Price: | $ 1.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 55V 31A DPAK |
More Detail: | P-Channel 55V 31A (Tc) 110W (Tc) Surface Mount D-P... |
DataSheet: | AUIRFR5305 Datasheet/PDF |
Quantity: | 2994 |
1 +: | $ 1.37340 |
10 +: | $ 1.24047 |
100 +: | $ 0.99685 |
500 +: | $ 0.77531 |
1000 +: | $ 0.64240 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AUIRFR5305 is a advanced field effect transistor (FET) designed to address specific applications in power conversion and motor control applications. This device is a single N-channel MOSFET and it has an integrated fast-recovery diode, allowing the user to save cost, reduce the component count, improve system efficiency and save layout space. This device is available in several power ratings so the user can choose the one that best fits the application.
The application field of this MOSFET includes switch-mode power supplies and DC/DC converter, motor drives, PFC pre-regulation and solenoid or valve control. This device can allow for design optimization of the system due to its low gate charge, low on-resistance, fast body diode and fast turn-on and turn-off times. As one of the first-generation single N-Channel MOSFETs, the AUIRFR5305 is especially suitable for Power Converter, high switching frequency and current applications.
The working principle of this device is relatively simple and efficient. The internal FET of the device has a metal-oxide semiconductor gate which allows the passage of current when p-type and n-type semiconductor layers meet. This gate is triggered by a voltage applied by the user, varying the current flowing through the device, with levels of both voltage and current control. This voltage is more efficient than other control methods, allowing for fast turn-on and turn-off times.
The internal fast recovery diode is designed to discharge capacitors in order to allow smooth current flow to the load during turn-off cycles. The diode is constructed using germanium and it is optimized to provide very low forward voltage drops as well as fast recovery times, ensuring no disruption of the power system during the switching processes. Apart from this main function, it is also designed to provide a certain level of ESD protection to the MOSFET.
In conclusion, the single N-channel MOSFET AUIRFR5305 is an incredibly effective device for several applications related to power conversion and motor control. Its fast turn-on and turn-off times and its low gate charge, in addition to its integrated fast recovery diode, make this an ideal piece of equipment for the applications mentioned above. It is an effective way to reduce component count, cost and also save design space while providing efficient system operation.
The specific data is subject to PDF, and the above content is for reference
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