Allicdata Part #: | AUIRFR5410-ND |
Manufacturer Part#: |
AUIRFR5410 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 100V 13A DPAK |
More Detail: | P-Channel 100V 13A (Tc) 66W (Tc) Surface Mount D-P... |
DataSheet: | AUIRFR5410 Datasheet/PDF |
Quantity: | 1711 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 66W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 205 mOhm @ 7.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AUIRFR5410 are a monolithic N-channel MOSFETs with an integrated Schottky diode. These devices are designed for high-current, low-voltage DC and pulsed applications, making them ideal for use in many different power circuit designs. The AUIRFR5410 are widely used in DC-DC converters, battery chargers, mobile computer power supplies, telecom systems and other DC and power control applications.
The AUIRFR5410 is specifically designed to maintain high performance characteristics when operating at high gate voltage levels and temperature extremes. This allows for superior switching performance, such as high speed switching with lower losses, as well as increased ruggedness and reliability. The device also provides low on-resistance, a low gate threshold voltage and fast switching speed, making it ideal for a variety of high performance applications.
The basic operation of the AUIRFR5410 is rooted in the physics of the MOSFET, or metal-oxide-semiconductor field-effect transistor. This device has two distinct terminals associated with it: a gate terminal, and a source and drain terminal. A MOSFET operates by having an input voltage applied to the gate terminal, which creates an electrostatic field between its source and drain terminal. This electrostatic field allows electrons to flow through the device when a voltage is present between the source and drain terminals, which is known as a ‘channel’. By controlling the gate voltage, the user has full control over the flow of current through the device.
The AUIRFR5410 is able to provide effective switching control because of its integrated Schottky diode. This diode is specifically designed to have fast switching characteristics and low voltage drops, allowing for higher current efficiency. By having a low voltage drop across it, the AUIRFR5410 can operate at higher gate voltages but still maintain a safe operating temperature. This makes it ideal for use in DC and power control applications.
The AUIRFR5410 is an excellent choice for use in high current, low voltage applications, such as DC-DC converters and battery chargers. Its integrated Schottky diode allows for fast switching, low losses, and improved reliability and ruggedness. This, combined with the device’s low gate threshold voltage and high resistance make it an ideal choice for DC and power control applications.
The specific data is subject to PDF, and the above content is for reference
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