AUIRFR5410TRL

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	66W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	760pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	58nC @ 10V
Series:	Automotive, AEC-Q101, HEXFET®
Rds On (Max) @ Id, Vgs:	205 mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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AUIRFR5410TRL Application Field and Working Principle

The AUIRFR5410TRL is a single power MOSFET device commonly used in a wide range of applications. It is designed to provide high current switching and general purpose MOSFET solution for applications requiring high power dissipation and voltage load or current range up to 40 A and 250 V.The AUIRFR5410TRL is an Enhanced Low-Voltage Transistor (ELVT). It is a type of MOSFET that is optimized for low voltage and low gate charge applications. This device utilizes a planar-type structure combining the latest advances in silicon technology and UIS (Uniform Improved Structure) to reduce the voltage drop at the drain to a minimum, thus reducing power loss and providing enhanced performance for conduction, switching, and low gate charge characteristics.This device is ideal for applications requiring power switching in consumer and industrial electronics such as consumer audio, motor control, home appliances, lighting, medical devices, and motor applications. The AUIRFR5410TRL is also suitable for use in automotive and high-end industrial applications such as motor controllers, light dimmers, start-stops, power converters and power regulators.This device features a low-voltage threshold and a maximum Drain-Source Voltage (VDS) of 250 V, making it ideal for low-voltage applications. It also features a low Gate-Source Threshold Voltage (Vgs) of 1.5 V and a maximum Drain-Source On-state Resistance (RDS) of 2.4 Ω.The AUIRFR5410TRL has a breakdown (avalanche) voltage rating of 350 V and a low on-state resistance.Its fast switching speed and low capacitance allows for efficient power management in high-speed circuits.The AUIRFR5410TRL has a variety of features designed specifically to improve its performance. These features include ESD protection with a minimum of ±1000V clamping voltage, (in-line with MIL-STD-883 and IEC-61000-4-2) an over temperature protection (OTP) to detect excessive temperature and shut-off the device for safe operation, temperature matched diode devices and avalanche rated power devices for improved power protection and low power devices for improved efficiency.The working principle of the AUIRFR5410TRL is based on the principle of the field-effect transistor (FET). This device uses a gate to modulate the flow of current between the drain and the source. An external voltage applied to the gate will create a strong electric field. This electric field will modify the width of the transistor channel, thus modulating the flow of current between source and drain. This device can be operated in either the enhancement or depletion mode, depending on the voltage applied to the gate terminal of the device.When the voltage of the gate terminal is set to a positive voltage relative to the source terminal, the device enters enhancement mode operation. Enhancing this mode increases the current flowing through the channel, between the source and drain, thus increasing the power dissipation of the device. When the gate voltage is set to negative voltage, the device enters into depletion mode operation. Depletion mode reduces the current flowing through the device, thus reducing the power dissipation of the device.In summary, AUIRFR5410TRL is a single power MOSFET device that is optimized for low voltage and low gate charge applications. Its planar design and state of the art technologies grant it with exceptionally low-on resistance and enhanced performance for conduction and switching. Its fast switching speed and low capacitance facilitate power management in high-speed circuits. This device utilizes a gate terminal to modulate voltage between the source and the drain. When a positive voltage is applied to the gate, the device enters into enhancement mode, and when a negative voltage is applied, the device enters into depletion mode. The AUIRFR5410TRL′s features and its working principle make it an ideal device for a wide range of applications, including home electronics, automotive and industrial equipment, lighting and medical devices.

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