Allicdata Part #: | IRAUIRFR8401-ND |
Manufacturer Part#: |
AUIRFR8401 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 100A DPAK |
More Detail: | N-Channel 40V 100A (Tc) 79W (Tc) Surface Mount D-P... |
DataSheet: | AUIRFR8401 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Base Part Number: | IRFR8401 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
Vgs (Max): | ±20V |
Series: | HEXFET® |
Vgs(th) (Max) @ Id: | 3.9V @ 50µA |
Rds On (Max) @ Id, Vgs: | 4.25 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRFR8401 is a single, high-performance metal-oxide-semiconductor field-effect transistor (MOSFET). It is an advanced device that is suitable for high-frequency switching operations. The AUIRFR8401 is a common-source type MOSFET, which is used to amplify, switch, or oscillate electrical signals in a wide variety of applications.
Features
The AUIRFR8401 features a low on-resistance, low gate charge, and a fast switching response time. Its low on-resistance (Rds) enables efficient device operation, while its low gate charge reduces the input power required to switch the device. The fast switching response time of the AUIRFR8401 ensures that it can meet the needs of high-frequency applications. Additionally, the device features excellent stability and reliability, making it ideal for long-term operations.
Applications
The AUIRFR8401 is commonly used in a variety of high-frequency switching applications, such as radio frequency (RF) power amplifiers, power supplies, bluetooth transmitters and receivers, and audio amplifiers. Its low on-resistance and fast switching response time make it ideal for these types of applications. Additionally, the device is used in low-noise amplifiers, such as low-noise op-amps and operational transconductance amplifier (OTA) circuits. The AUIRFR8401 can also be used as an input switch in voltage regulator circuits, which is beneficial for reducing the device power consumption.
Working Principle
The working principle of the AUIRFR8401 is based on the principle of a traditional MOSFET. A MOSFET is a four-terminal device consisting of a source, a drain, a gate, and a body. The device operates by using a voltage applied to the gate electrode to control the current between the source and drain electrodes. When a positive voltage is applied to the gate, the device is turned on and a current flows between the source and drain pins. When the voltage is removed, the device is turned off and the current is stopped.
The AUIRFR8401 operates similarly, but with some enhancements. It is designed to have a low on-resistance and a fast switching response time, which allows it to be used in high-frequency applications. Additionally, it has a low gate charge, which allows it to switch quickly and efficiently.
Conclusion
The AUIRFR8401 is a single, high-performance MOSFET that is suitable for high-frequency switching operations. It has a low on-resistance, low gate charge, and fast switching response time, which makes it ideal for a wide variety of applications, including RF power amplifiers, audio amplifiers, and low-noise amplifiers. The device operates based on the principle of a traditional MOSFET, with enhancements for improved performance.
The specific data is subject to PDF, and the above content is for reference
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