AUIRFR8401TRL

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The AUIRFR8401TRL is a single N-channel enhancement mode Field-Effect Transistor (FET). It is specifically designed for automotive, automotive power management, and other higher reliability applications. The FET is built with an ultra low on-resistance, high temperature-stable gate, 10V gate-to-source protection and a low current, integrated gate protection FET. It is rated at 30V and has a maximum power dissipation of 0.15W.

The construction of a Field-Effect Transistor is made up of three primary components – the source, gate, and drain – which form the main structure of the device. The source is the beginning point of the signal, the gate is what controls the flow of the signal and the drain is the end point. The flow of current is controlled by the voltage applied to the gate. With an increase in the gate voltage, the current source to drain increases.

The AUIRFR8401TRL works in a similar manner. When a positive voltage is applied to the gate, the electrical field that is created will extend into the body of the transistor, opening up a channel between the drain and the source. This process is called enhancement. As the gate voltage increases, this channel will extend further, resulting in an increased flow of current. In the absence of a gate voltage, the channel will remain closed, preventing any current flow.

The main application of the AUIRFR8401TRL is in automotive power management, such as automotive battery management, power conversion, and electronic control modules. It provides low on-resistance and low drain-source capacitance for faster switching operations. It also has a temperature stability of up to 150°C for high temperature performance. Additionally, it has 10V gate-to-source protection and an integrated gate protection FET for reduced complexity and cost.

In summary, the AUIRFR8401TRL is a single N-channel enhancement mode Field-Effect Transistor designed for automotive, automotive power management, and higher reliability applications. It has a low on-resistance and low drain-source capacitance for faster switching operations and a temperature stability of up to 150°C. Additionally, it has 10V gate-to-source protection and an integrated gate protection FET for enhanced protection and reduced complexity.

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