AUIRFR8403TRL Allicdata Electronics
Allicdata Part #:

IFAUIRFR8403TRL-ND

Manufacturer Part#:

AUIRFR8403TRL

Price: $ 0.64
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 100A DPAK
More Detail: N-Channel 40V 100A (Tc) 99W (Tc) Surface Mount D-P...
DataSheet: AUIRFR8403TRL datasheetAUIRFR8403TRL Datasheet/PDF
Quantity: 1000
3000 +: $ 0.57580
Stock 1000Can Ship Immediately
$ 0.64
Specifications
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
Base Part Number: IRFR8403
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 99W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3171pF @ 25V
Vgs (Max): ±20V
Series: HEXFET®
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 76A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AUIRFR8403TRL is a type of MOSFET, which stands for Metal-Oxide-Semiconductor Field Effect Transistors. This type of transistor is commonly used in a variety of electronic applications in order to provide efficient switching. It works by using a voltage applied across the gate terminal to modulate the current in the device.

The AUIRFR8403TRL is an enhancement MOSFET, which means that it requires a positive gate voltage to turn on. A voltage applied to the gate will create an electric field, which will attract electrons to the gate region and create an inversion layer in the channel of the device. This inversion layer will act as a conducting path between the drain and source terminals and enable current to flow. To turn off the device, the gate voltage will need to be removed.

The AUIRFR8403TRL is a single N-Channel MOSFET and it is designed to be used in a variety of different applications. It is widely used in switching, control and power management circuits. It is also used in DC and AC power supplies, LED drivers, battery chargers, solar inverters, motor drivers, audio amplifiers and RF & microwave circuits.

Due to its high power density and low on-state resistance, the AUIRFR8403TRL is particularly well-suited for use in high-current and high-temperature applications. In addition, the device\'s small form factor allows it to be used in a variety of space-constrained applications. The device is also highly efficient and has a maximum drain current of 17A and a drain-source voltage of 100V.

The AUIRFR8403TRL is series of MOSFETs that have been designed to provide improved performance and enhanced features. The device is constructed using a feature-rich design that includes and on-chip Protection Circuit (PC) and Internal Avalanche Detection (IAD) for added protection and improved reliability. The on-chip PC monitors the drain voltage and switches off the device if the voltage exceeds a predefined level. The IAD feature will shut off the device if the drain current exceeds a predetermined threshold. This feature makes the device more reliable and helps ensure that it can withstand extreme overload conditions.

The AUIRFR8403TRL is a versatile device that provides improved performance and enhanced features. It is suitable for a variety of applications and is commonly used in power supplies, LED drivers, battery chargers and RF circuits. The device has a low on-state resistance and a high power density, which make it particularly well-suited for high-current and high-temperature applications. In addition, its small form factor and on-chip protection features provide improved reliability and added protection. The device is therefore an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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