AUIRFS3004-7TRL Allicdata Electronics
Allicdata Part #:

AUIRFS3004-7TRL-ND

Manufacturer Part#:

AUIRFS3004-7TRL

Price: $ 2.47
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 240A D2PAK-7P
More Detail: N-Channel 40V 240A (Tc) 380W (Tc) Surface Mount D2...
DataSheet: AUIRFS3004-7TRL datasheetAUIRFS3004-7TRL Datasheet/PDF
Quantity: 1000
800 +: $ 2.22620
Stock 1000Can Ship Immediately
$ 2.47
Specifications
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Base Part Number: AUIRFS3004
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: D2PAK (7-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 380W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 25V
Vgs (Max): ±20V
Series: HEXFET®
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 195A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AUIRFS3004-7TRL is an advanced field-effect transistor (FET) that is designed for low power applications like switching and amplifying signals, as well as for providing protective functions. It is part of a larger family of FETs made by Advanced Semiconductor and offers many performance, efficiency, and cost advantage benefits.

Part of the large family of FETs made by Advanced Semiconductor, the AUIRFS3004-7TRL is a single P-channel enhancement mode type device. This type of FET has the distinctive characteristic of being able to switch much faster than the more traditional N-channel devices due to the lack of body diode. This characteristic makes it ideal for speed sensitive applications.

The AUIRFS3004-7TRL has a breakdown voltage of 25V and an on-state resistance of as low as 11Ω max. It can handle a maximum drain current of 2A, while its gate-source voltage rating is -3V. The FET can handle a maximum gate drive of 8mA tough it is not recommended to exceed this. As such, it is capable of providing a wide range of signal level switching and amplification functions. The device is also reverse-recovery time tested to ensure reliable and fast device timing.

In terms of construction, the device is built on an SO8 standard package and is lead-frame free which provides excellent reliability, thermal reliability, and cost effectiveness. The FET also has filters which improve its surge immunity during power-on and power-off operations. Power dissipation is kept in check by the low gate charge which eliminates the need for heat sinks and thereby ensuring an effective power dissipation solution.

The AUIRFS3004-7TRL can be used as a protective switch, signal amplifier, and as a power supply switch for various low power applications. It is also suitable for a wide range of automotive, telecommunication, and industrial applications. The FET is designed for use in both normal operation and in the event of a fault situation. Therefore, its use is suitable for the implementation of robust power supplies and signal conditioning systems. It can also be used for the implementation of other safety features like fault protection and system shutdown.

The AUIRFS3004-7TRL works by regulating the voltage at the gate in order to control the current that flows from the drain. The source of the device is connected to the ground which allows the current to flow through the drain. The voltage at the gate will therefore determine the current that is allowed to flow through the drain in a linear fashion. This enables the device to provide a wide range of signal level switching and amplification functions.

In conclusion, the AUIRFS3004-7TRL is a single P-channel enhancement mode type field-effect transistor (FET) that is designed for low power applications like switching and amplifying signals, as well as for providing protective functions. It has a breakdown voltage of 25V and an on-state resistance of as low as 11Ω max and is capable of providing a wide range of signal level switching and amplification functions. The device is also reverse-recovery time tested to ensure reliable and fast device timing and works by regulating the voltage at the gate in order to control the current that flows from the drain. As such, it can be used for a wide range of automotive, telecommunication, and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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