Allicdata Part #: | AUIRFS3006-ND |
Manufacturer Part#: |
AUIRFS3006 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 270A D2PAK |
More Detail: | N-Channel 60V 195A (Tc) 375W (Tc) Surface Mount D2... |
DataSheet: | AUIRFS3006 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8970pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 300nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 170A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRFS3006 is a single, monolithic, logic-level, enhancement-mode Avalanche-rugged, N-Channel Power MOSFET that contains bootstrap diodes. It is designed to deliver the performance advantage of vertical DMOS technology in the industry standard SOT-223 package. It is built to handle the high voltages and currents associated with switching applications.
This MOSFET is made using advanced vertical DMOS technology which minimizes the on-state resistance. Its Avalanche-rugged technology, which is state-of-the-art vertical DMOS with key technological innovations, enables the desired level of ruggedness at high voltages. The design also enhances ruggedness while limiting input capacitance.
The AUIRFS3006 is rated at 100V and can handle a maximum drain current of 6A. The device can handle a maximum junction temperature of 175°C and has a superior thermal resistance of 1.4°C/W.
The AUIRFS3006 is available in three packages: the SOT-223 package which measures 2.7mm x 5.3mm, the TO-220 Package which is 4.8mm x 5.3mm and the waterproof IP-68 package which measures 8.1mm x 10.7mm and is ideal for outdoor applications. The device has a Vgs threshold voltage of 4V so that it can be used with typical logic devices. The device also has a fast switching speed of up to 500kHz.
The AUIRFS3006 is an ideal choice for switching applications such as motor drives, DC-DC converters, high-power motor drivers, industrial equipment, and automotive applications. It has many advantages such as providing superior on-state performance, robust avalanche ruggedness, and fast switching. The device is also highly reliable and has a high operation temperature, which makes it suitable for outdoor use.
The AUIRFS3006 operates on the principle of the avalanche breakdown of a reverse bias applied to the MOSFET\'s gate-source junction. This reverse bias creates an electric field, which causes charge carriers (holes and electrons) to move from their respective regions and into the region of the junction. The resulting electric field causes the carriers to accelerate, resulting in a chain reaction that leads to a sudden surge in current known as the avalanche breakdown. This action results in a higher drain current in the device and hence, its power gain.
The device also contains bootstrap diodes which minimize the ON resistance of the device and protect the MOSFET against voltage transients. The versatile and reliable design of the AUIRFS3006 makes it a great choice for switching applications.
The specific data is subject to PDF, and the above content is for reference
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