Allicdata Part #: | AUIRFS3206TRLCT-ND |
Manufacturer Part#: |
AUIRFS3206TRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 210A D2PAK |
More Detail: | N-Channel 60V 120A (Tc) 300W (Tc) Surface Mount D2... |
DataSheet: | AUIRFS3206TRL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6540pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Cut Tape (CT) |
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The AUIRFS3206TRL is a silicon N-Channel Field Effect Transistor (FET) designed, implemented and developed by ON Semiconductor. It is part of their extensive family of Rugged, High Voltage Power MOSFETs (RHBV). It is a single, MOSFET of the Insulated Gate Bipolar Transistor (IGBT) design and can be used in multiple applications over several industries.
This FET is able to withstand higher operating temperatures than other FETs, making it ideal for power supply and automotive applications. The AUIRFS3206TRL is capable of switching current and voltages up to 30A, 600V and offers a and a low on-state resistance and low gate charge, resulting in lower losses and less thermal stress at elevated temperatures. Additionally, the FET also features reverse avalanche capability, so it can be used in high speed switching, high frequency DC-DC power supplies and synchronous rectification applications.
The working principle of the AUIRFS3206TRL MOSFET relies upon the gate-source voltage, or Vgs, to control the drain-source current, or Id. The Vgs activates the Drain-Source FET, allowing current to flow by creating an existing channel. The greater the Vgs voltage, the wider the channel, and the more current (Id) can flow. The Vgs voltage is usually supplied by a gate driver circuit, which is connected to the Gate pin of the MOSFET. MOSFETs, such as the AUIRFS3206TRL, are voltage-controlled rather than resistance-controlled, so they work more efficiently in high-speed switching applications, where power dissipation is essential.
The AUIRFS3206TRL is a single MOSFET that can be used in many different applications due to its wide range of features. The AUIRFS3206TRL\'s high voltage capability and rugged design make it ideal for applications such as power supply and automotive applications, high speed switching and high frequency DC-DC power supplies and synchronous rectification. It is also capable of withstanding higher temperatures than other FETs, making it an ideal choice for high power applications. Additionally, its low on-state resistance and low gate charge provides for lower losses and less thermal stress. With its wide range of features, the AUIRFS3206TRL is well suited to meet the needs of multiple industries.
The specific data is subject to PDF, and the above content is for reference
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