Allicdata Part #: | AUIRFS3306TRL-ND |
Manufacturer Part#: |
AUIRFS3306TRL |
Price: | $ 1.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 160A D2PAK |
More Detail: | N-Channel 60V 120A (Tc) 230W (Tc) Surface Mount D2... |
DataSheet: | AUIRFS3306TRL Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.18455 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 230W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4520pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A IRFS3306TRL is a high voltage, fast switching, low on-state resistance (Rds) power MOSFET that can be used in a wide range of applications.
The device sources current almost equally in both directions and is a voltage driven device. This makes IRFS3306TRL suitable for switching applications as well as for weight and size reduction. IRFS3306TRL also offers MOSFET gate drive capabilities that are superior to other devices, making it a good choice for applications where space is limited.
The IRFS3306TRL is a vertical DMOS power MOSFET with a 30V drain-to-source breakdown voltage rating, a 0.20 Ohm on-state resistance typical at 4.5V, and a low gate charge of 4.6nC typical at 4.5V. The device also features a maximum safe operating area of 50A/15V and an avalanche energy rating of 20mJ.
The IRFS3306TRL is designed for use in a range of applications such as power switches and converters, motor drivers, digital power supplies, audio amplifiers, and automotive electronics. It can be used to replace bipolar transistors in many applications and offers improved performance, longer life and lower operating temperature.
The working principle of the IRFS3306TRL is based on the fact that it is a voltage-driven device. When an appropriate gate voltage is applied, the source-drain channel is established for current flow. The amount of current flow is regulated by the gate voltage applied. The amount of current flowing through the source-drain channel can be controlled by adjusting the gate voltage, enabling the device to be used to switch on or off, as required.
In addition to its voltage-driven nature, the IRFS3306TRL also features a fast switching speed and low on-state resistance (Rds). This makes the device ideal for applications requiring high power with minimal losses, such as motor drivers. Due to its low Rds, it is also efficient at handling high frequencies, which is useful in some power converter applications.
The IRFS3306TRL is a versatile, high voltage, fast switching, low on-state resistance MOSFET that can be used in a wide range of applications. Its fast switching speeds and low Rds make it an effective choice for power switching, motor drivers, and power converters. Its low gate charge and superior gate drive capabilities further ensure that it is a suitable choice for when space is limited. The IRFS3306TRL is a reliable and efficient device for a multitude of power applications.
The specific data is subject to PDF, and the above content is for reference
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