Allicdata Part #: | AUIRFS3307Z-ND |
Manufacturer Part#: |
AUIRFS3307Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 120A D2PAK |
More Detail: | N-Channel 75V 120A (Tc) 230W (Tc) Surface Mount D2... |
DataSheet: | AUIRFS3307Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 230W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4750pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 5.8 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRFS3307Z is a field-effect transistor (FET) designed for a variety of applications such as load switching, power management, and audio amplification. It is a single, low-voltage N-type metal oxide semiconductor (MOSFET) transistor that has a low gate charge and an integrated ESD protection diode. With its low Rds(on) resistance and fast switching time, the AUIRFS3307Z is well-suited for a range of applications that require low voltage and low power.[1]
The working principle of the AUIRFS3307Z transistor is based on the basic principle of a MOSFET. MOSFETs are commonly used for their high input resistance, low input current, and high switching speed. The AUIRFS3307Z uses a N-type metal-oxide-semiconductor (NMOS) structure to achieve this performance. The NMOS structure utilizes two P-type substrates and one N-type substrate to create an insulated gate field effect transistor. The N-type substrate is responsible for the mechanism which creates an insulated gate field. This field is used to control the current flow between the source and drain terminals of the transistor, which is the basic principle of operation of any FET.
The AUIRFS3307Z features a low gate charge (Qg), which helps to reduce switching losses. The transistor also features low Rds(on) resistance, meaning that it can handle more current than a transistor with a higher Rds(on) resistance. Additionally, the AUIRFS3307Z has an integrated ESD protection diode that helps to protect the transistor from damage due to electrostatic discharge.
The AUIRFS3307Z is an ideal choice for low-voltage and low-power applications that require fast switching speeds. It can be used for applications such as load switching, power management, and audio amplification. It can be used in conjunction with other components such as inverters or drivers to create a complete circuit. The AUIRFS3307Z is also one of the most widely used transistors in automotive applications due to its low on-resistance and fast switching capabilities.
The AUIRFS3307Z is a versatile transistor, capable of being used in a variety of applications. Its low input current, high input resistance, low Rds(on) resistance, and fast switching time make it an excellent choice for applications that require low power and high performance. Additionally, its integrated ESD protection diode helps to protect the device from damage due to electrostatic discharge. This makes the AUIRFS3307Z a great choice for automotive and other applications where reliability is a requirement.
The specific data is subject to PDF, and the above content is for reference
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