Allicdata Part #: | AUIRFS3607TRL-ND |
Manufacturer Part#: |
AUIRFS3607TRL |
Price: | $ 1.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 80A D2PAK |
More Detail: | N-Channel 75V 80A (Tc) 140W (Tc) Surface Mount D2P... |
DataSheet: | AUIRFS3607TRL Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.98582 |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3070pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 46A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AUIRFS3607TRL is a type of single transistor technology, and is particularly renowned for its uses in the field of application, as well as its functional and effective working principles. This type of transistor is usually composed of metal oxide and electron-rich semiconductor materials, and serves as a bridge that allows electrical current to flow and be controlled by the gate voltage. It has become the go-to type of transistor for power switching and semiconductor device applications. In addition to its ability to act as a switch, the AUIRFS3607TRL can also be used as an amplifier, allowing it to further increase the level of current operating through it.
To understand how the AUIRFS3607TRL works, it is important to understand the basic principle of its operation. This transistor relies upon the principles of the metal oxide semiconductor field effect transistor (MOSFET). While holding some similarities with regular bipolar transistors, they differ in that they are typically composed of two terminal structures, namely the "drain" and "source". The drain is the part of the device where the electrical charge accumulates, whereas the source acts as the gate to let the current flow through. When the gate is activated, it allows the electric current to flow from the drain to the source, thus triggering the device into operation.
As for the application fields of the AUIRFS3607TRL, this type of transistor is mainly used for power switching and semiconductor device manipulation applications. Power switching is often done by adjusting the current in the device to its target levels, thereby achieving maximum energy efficiency and helping to maintain a stable voltage level. This technology is often found in laptops and other battery-operated devices, where the function of the transistor is to act as a power switch and regulate the voltage supply. As for semiconductor device manipulation, these transistors can be used to further increase the electrical current, allowing for better amplification and power output.
In addition, the AUIRFS3607TRL transistor is also renowned for its low on-state resistance, as well as its high operating frequency for power electronic systems. This device is able to operate under high switching speeds without generating too much heat or losing power, thereby helping make electrical circuits more reliable. Furthermore, its low on-state resistance makes it a great choice for applications that require low-voltage supply regulation. This includes the use of MOSFETs in timers, microcontrollers, and other advanced circuit designs.
Finally, the AUIRFS3607TRL has become an essential part of the application field and its working principle has been lauded for its effectiveness in controlling electrical current and conducting power switching. As such, this type of transistor has become increasingly commonplace in areas such as semiconductor device manipulation, power switching, and of course power electronic systems. In the coming years, this technology is expected to become even more advanced and the device will continue to be a staple in the field of semiconductor device manipulation and power switching.
The specific data is subject to PDF, and the above content is for reference
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