AUIRFS4115-7P

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AUIRFS4115-7P (Advanced Ultra-Fast IGBT + Freewheeling Diode) is a power MOSFET with a fast switching IGBT (Insulated Gate Bipolar Transistor) and a fast body diode. It is a highly reliable device with low on-resistance and TTL compatibility.

The AUIRFS4115-7P is a P-channel MOSFET (metal-oxide-semiconductor field-effect transistor) with an integrated IGBT and the body diode. It is designed for high speed switching applications with the highest efficiency and reliability. Compared to standard MOSFETs, AUIRFS4115-7P requires less gate drive power, resulting in higher utilization efficiency. Additionally, its integrated IGBT makes it ideal for high voltage applications.

TheAUIRFS4115-7P has a wide range of application fields such as switching power supplies, DC motor drives, uninterruptible power supplies (UPS), DC-DC converters, industrial computers, battery, monitors and more. It can also be used in motor vehicle applications due to its low on-resistance and ruggedness.

Theworking principle of AUIRFS4115-7P revolves around an insulated gate FET (IGFET), a four-layer semiconductor device similar to a MOSFET. It consists of an insulated gate that is formed by an oxide layer on the top of the FET, which serves to control the flow of current between its source and drain terminals. When a positive voltage is applied to the gate, the channel between the source and the drain opens up and the current flows between them. When the voltage is reversed, the channel closes, cutting off the current.

TheAUIRFS4115-7P also incorporates an integrated fast body diode in order to provide over-current protection. The body diode is a piece of silicon that is reverse-biased between the source and the drain, allowing current to flow in a single direction. It is connected such that the current is only allowed to pass in one direction, in order to prevent short circuiting and other over-current scenarios.

TheAUIRFS4115-7P utilizes an off-the-shelf IGBT with fast switching characteristics, making it an excellent choice for applications that require high efficiency and low on-resistance. Its integrated body diode provides over-current protection, while its low gate drive power leads to higher power utilization efficiency. Its wide range of applications makes it suitable for a variety of industrial, automotive and consumer applications, making it an excellent choice for power switches in a wide range of industries.

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