Allicdata Part #: | IRAUIRFS8403-ND |
Manufacturer Part#: |
AUIRFS8403 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 123A D2PAK |
More Detail: | N-Channel 40V 123A (Tc) 99W (Tc) Surface Mount D2P... |
DataSheet: | AUIRFS8403 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.9V @ 100µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 99W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3183pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 93nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 70A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 123A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRFS8403 is an advanced single-channel N-Channel Enhancement Mode Power Mosfet. This advanced device is crafted for high current designs and is capable of providing very high temperature operation. This article discusses the application field and working principle of the AUIRFS8403.
Application Fields
The AUIRFS8403 is designed for high current applications. These include power amplifiers, audio amplifiers, motor drives, and solid-state relay systems. It is well suited for use in high-frequency switching applications, such as low-voltage DC-DC converter systems. It can also be used as an extremely efficient switch in automotive and general-purpose electronics.
The AUIRFS8403 is also suitable for use in AC-DC SMPS, DC-DC converters, motor controls, and PoE applications. It can source up to 650 mA of current, making it ideal for high-current applications. Additionally, it has a low on-resistance (<70 mΩ) and low gate charge that makes it suitable for high-frequency switching applications. This device is also rated for application temperatures up to 175 °C, allowing it to cope with higher currents and densities.
Working Principle
The AUIRFS8403 operates in an enhancement mode. In this mode, the transistor channel is “enhanced” when a positive voltage is applied between the gate and the source. This creates a conductive path between the drain and the source which allows the flow of current. The current flow is then controlled by varying the gate-source voltage. This makes the device ideal for use as a switch in digital circuitry.
The AUIRFS8403 has a low on-resistance which allows it to switch quickly and efficiently. This makes it ideal for use in high-speed circuitry. Additionally, the low gate charge and low static gate threshold voltage allow it to be driven easily with simple logic. The device is also capable of being driven with low voltage and low current levels, making it highly efficient.
The AUIRFS8403 is also capable of supporting a wide range of pulsed currents and peak currents, allowing it to be used in a variety of high-current applications. It also has a high breakdown voltage and a high temperature rating, making it suitable for use in high-temperature applications. Additionally, it has excellent EMI immunity and low stored charge, making it well suited for use in high-speed circuits.
Conclusion
The AUIRFS8403 is an advanced single-channel N-Channel Enhancement Mode Power Mosfet. It is a highly efficient device, with low on-resistance and low gate charge. It is capable of supporting a wide range of peak currents, and is well suited for use in high-frequency switching applications and high-current applications. Additionally, its high temperature rating and low stored charge make it suitable for use in a variety of high-temperature applications.
The specific data is subject to PDF, and the above content is for reference
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