Allicdata Part #: | IRAUIRFS8409-ND |
Manufacturer Part#: |
AUIRFS8409 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 195A D2PAK |
More Detail: | N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount D2... |
DataSheet: | AUIRFS8409 Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 450nC @ 10V |
Base Part Number: | IRFS8409 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14240pF @ 25V |
Vgs (Max): | ±20V |
Series: | HEXFET® |
Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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AUIRFS8409 is a type of vertical double source/drain insulated-gate field-effect transistor (IGFET), more commonly known as a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of transistor is optimal for applications such as motor control, lighting, and power conversion.
The most common use of the AUIRFS8409 is in power semiconductor applications, as it features excellent RDS(on) conduction. The device also offers high-level ESD protection, making it suitable for a wide array of industrial applications. Moreover, its tight breakdown voltage matching makes it an ideal choice for high-performance power control applications.
This series of vertical double source/drain IGFET is designed to be a direct replacement for the 555A, 6012A, and 6114A, which are considerably slower and consume more power than the AUIRFS8409. This series of power transistors also offers excellent thermal performance, high operating frequencies, and fast switching times.
The working principle of the AUIRFS8409 is almost identical to other single source/drain MOSFETs, with a couple of notable exceptions. First, the device features two separate power pins, which can be utilized to increase the control over its operation. Second, the gate terminal of the device is connected to both sources, allowing for faster switching and better noise suppression.
When using the AUIRFS8409, one of the two power pins must be connected to the positive power rail and the other to the ground. The gate should be typically connected to a logic source, such as a microcontroller, and then used to provide various gate voltages in order to control the current flow. When the logic source changes the state of the gate source, it activates the MOSFET, which then acts like the armature in a relay and allows the current to flow from the source to the drain pin.
The wide range of AUIRFS8409 power transistors available makes it possible to tailor these components to match the user\'s needs. Designed to provide high performance and efficiency, while also offering cost-savings, these components are an ideal choice for a variety of industrial applications. With their excellent response time, low power consumption, and superior thermal performance, these devices are ideal for use in a variety of motor control, lighting, and power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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