AUIRFS8409TRL

Gate Charge (Qg) (Max) @ Vgs:	450nC @ 10V
Base Part Number:	IRFS8409
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	375W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	14240pF @ 25V
Vgs (Max):	±20V
Series:	HEXFET®
Vgs(th) (Max) @ Id:	3.9V @ 250µA
Rds On (Max) @ Id, Vgs:	1.2 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	195A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The AUIRFS8409TRL is a surface-mounted insulated-gate field effect transistor (IGFET) that has broad application across a range of fields. It has many features, from low on-resistance to fast switching capabilities, which make it a valuable component for many types of electronics.This IGFET is a single N-channel device with a built-in protection diode. The Source and Drain pins are electrically connected to the transistor channel by a metal ohmic contact and a thermal fuse, while the Gate ccontact is insulated by a gate oxide layer. The source and drain electrodes of the transistor are doped with either phosphorus or arsenic. The V DS, threshold voltage and drain-source breakdown voltage ratings of the AUIRFS8409TRL are +30V, -3V, and -20V respectively.The AUIRFS8409TRL is widely used in various applications, including power switches and converters, telecommunications hardware, computer hardware, and consumer electronics. It is known for its low on-resistance, low input capacitance, and high frequency operation, which make it a great choice for a range of applications. In power switching applications, it is very useful due to its low on-resistance, which minimizes power losses in the form of heat. In power converters, it can be used to help regulate voltage and current. It can also be used in telecommunications hardware and computer hardware to help improve the reliability and efficiency of any system.The working principle of the AUIRFS8409TRL is based on the phenomenon of "channel current," which is the amount of electrons that travel through the channel of the transistor. When a positive voltage is applied to the Gate signal, the transistor will draw a maximum amount of current from the source. As the voltage increases, the channel current also increases until it reaches saturation, which causes the Drain signal to draw current from the Source.The AUIRFS8409TRL can be used in both switching and logic applications. In switching applications, it can be used to control a circuit by either activating or deactivating it. When the FET is in its "off" state, it will not draw current from the Source. Conversely, when in its "on" state, it will draw current from the Source in order to turn on the circuit. When using the AUIRFS8409TRL in logic applications, it can be used as a comparator or logic gate to control the activation or deactivation of a circuit based on a certain input.In conclusion, the AUIRFS8409TRL is a single n-channel insulated-gate field effect transistor that has a wide range of applications. It is known for its low on-resistance, low input capacitance, and high frequency operation. It is used in power switches and converters, telecommunications hardware, computer hardware, and consumer electronics. Its working principle is based on the phenomenon of "channel current," which is the amount of electrons that travel through the channel of the transistor. It can be used in both switching and logic applications to control or activate a circuit.

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