Allicdata Part #: | AUIRFSA8409-7TRL-ND |
Manufacturer Part#: |
AUIRFSA8409-7TRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET NCH 40V 523A D2PAK |
More Detail: | N-Channel 40V 523A (Tc) 375W (Tc) Surface Mount D2... |
DataSheet: | AUIRFSA8409-7TRL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package: | D2PAK (7-Lead) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13975pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 460nC @ 10V |
Series: | Automotive, AEC-Q101, HEXFET® |
Rds On (Max) @ Id, Vgs: | 0.69 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 523A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AUIRFSA8409-7TRL is a Power MOSFET used in a wide range of applications. It is a passive three-terminal electronic device that can be used for both linear and switching applications. It has been widely used in the industrial and automotive industries, as well as the audio, telecommunications and other fields.
The device is a single N-Channel Enhancement-Mode MOSFET. Its features include an S-GATE structure, fast rise and fall times and good thermal resistance. The device has an optimized gate-source voltage DR able to support pulse width modulation control signals that can be used in digital communications. The device also features a low RDS (on) and a pull-up resistor that helps to minimize the switching times.
The AUIRFSA8409-7TRL is employed in a wide range of applications, including power management and switching applications. The device is used in both high and low-voltage circuits as well as for pulse width modulation (PWM) control applications. It is used for high-speed and low-noise operation, in bridgeless PFC and active-clamp half bridge converters, and can be used in AC/DC rectifiers and low-side gate drives.
The AUIRFSA8409-7TRL has a working principle that is based on the use of a gate oxide layer that governs the flow of electrons. The gate oxide layer acts as a resistance element when a voltage is applied to it. This resistance is known as the threshold voltage and is used to control the flow of electrons through the device. The device can be either in a saturated or enhanced-mode depending on the gate voltage.
In saturation mode, the device has a low on-resistance and conducts current. In enhanced mode, a larger gate voltage is applied that causes the on-resistance to increase. This ensures that the device operates in an efficient manner, resulting in greater power savings and improved performance.
The AUIRFSA8409-7TRL can be used for both linear and switching applications. It can be used to control the power dissipation of load circuits, provide load switch control, and act as a power device for DC-DC converters. It can also be used to control the amount of power that is dissipated by an inductor or coil in power supplies. In addition, the device can be used as a switch to turn on and off loads in a circuit.
The AUIRFSA8409-7TRL is a very versatile device. Its features and characteristics make it suitable for use in a wide variety of applications and environments. Its characteristics make it ideal for industrial, automotive, and audio applications, as well as digital communications and other fields.
The specific data is subject to PDF, and the above content is for reference
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