AUIRFSL4310 Allicdata Electronics
Allicdata Part #:

AUIRFSL4310-ND

Manufacturer Part#:

AUIRFSL4310

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 75A TO262
More Detail: N-Channel 100V 75A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: AUIRFSL4310 datasheetAUIRFSL4310 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7670pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The AUIRFSL4310 MOSFET is a single-Maroon-Gate Field Effect Transistor (MOSFET) which can be employed in switching and amplification applications. The device is a planar, enhancement-mode MOSFET which is optimized for low on-resistance while providing an enhanced voltage and current capability over traditional bulk MOSFETs. With a rated maximum drain-source voltage of 30V and a rated maximum drain current of 10A, this device provides excellent value and function in a variety of applications, including in motor and speed controllers for low-to-medium power applications.

The operating principle of MOSFETs is based on the presence of a thin dielectric layer between the gate and the drain-source of a semiconductor. This layer, which is sometimes referred to as a \'gate oxide\', acts as an insulator, preventing current from flowing between the gate and drain-source. When a voltage is applied to the gate, it creates an electric field which polarizes the gate oxide layer, inducing a charge imbalance in the drain-source of the MOSFET. This charge imbalance allows current to flow through the device, with the drain current being controlled by the applied voltage on the gate.

The AUIRFSL4310 MOSFET is ideal for applications requiring low on-state resistance and high switching speed. The device is particularly well-suited for implementations where a low-side and high-side MOSFET are combined to create a two-FET switch in which one FET source is connected to ground and the other is connected to an adjustable reference voltage. This enables the AUIRFSL4310 to be used in motor and speed controllers, allowing the user to adjust the voltage applied to the motor. In addition, the device can be used in power converters and power MOSFET applications.

The AUIRFSL4310 is also able to handle up to 10A of drain current, without suffering from significant on-resistance. This is due to its low on-resistance rating, which is consistently maintained over a wide range of drain-source voltages. Additionally, the device offers a high-voltage breakdown rating, with a tested drain-source breakdown voltage of up to 40V. This makes it particularly well-suited for use in power converters, which require devices capable of handling high currents at higher voltages.

The AUIRFSL4310 is also designed to switch quickly and accurately, making it ideal for use in high frequency applications. The device’s fast switching characteristics are thanks to its low drive voltage, which is typically around 4V for the AUIRFSL4310. In addition, the device has a low input capacitance, which decreases signal delay and reduces the amount of charge stored in the gate. This makes the AUIRFSL4310 ideal for high-speed switching and amplifying applications.

The AUIRFSL4310 is a single-Maroon-Gate FET which is ideal for those seeking a low-cost MOSFET with high current and voltage capabilities. The device is suited for a variety of applications, including motor and speed controllers, power converters and power MOSFET applications. In addition, the device offers a fast switching speed, low on-resistance, and a high-voltage breakdown rating, making it well-suited for high-speed amplification and switching.

The specific data is subject to PDF, and the above content is for reference

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