Allicdata Part #: | AUIRFSL4310-ND |
Manufacturer Part#: |
AUIRFSL4310 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 75A TO262 |
More Detail: | N-Channel 100V 75A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | AUIRFSL4310 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7670pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs: | 250nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 75A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The AUIRFSL4310 MOSFET is a single-Maroon-Gate Field Effect Transistor (MOSFET) which can be employed in switching and amplification applications. The device is a planar, enhancement-mode MOSFET which is optimized for low on-resistance while providing an enhanced voltage and current capability over traditional bulk MOSFETs. With a rated maximum drain-source voltage of 30V and a rated maximum drain current of 10A, this device provides excellent value and function in a variety of applications, including in motor and speed controllers for low-to-medium power applications.
The operating principle of MOSFETs is based on the presence of a thin dielectric layer between the gate and the drain-source of a semiconductor. This layer, which is sometimes referred to as a \'gate oxide\', acts as an insulator, preventing current from flowing between the gate and drain-source. When a voltage is applied to the gate, it creates an electric field which polarizes the gate oxide layer, inducing a charge imbalance in the drain-source of the MOSFET. This charge imbalance allows current to flow through the device, with the drain current being controlled by the applied voltage on the gate.
The AUIRFSL4310 MOSFET is ideal for applications requiring low on-state resistance and high switching speed. The device is particularly well-suited for implementations where a low-side and high-side MOSFET are combined to create a two-FET switch in which one FET source is connected to ground and the other is connected to an adjustable reference voltage. This enables the AUIRFSL4310 to be used in motor and speed controllers, allowing the user to adjust the voltage applied to the motor. In addition, the device can be used in power converters and power MOSFET applications.
The AUIRFSL4310 is also able to handle up to 10A of drain current, without suffering from significant on-resistance. This is due to its low on-resistance rating, which is consistently maintained over a wide range of drain-source voltages. Additionally, the device offers a high-voltage breakdown rating, with a tested drain-source breakdown voltage of up to 40V. This makes it particularly well-suited for use in power converters, which require devices capable of handling high currents at higher voltages.
The AUIRFSL4310 is also designed to switch quickly and accurately, making it ideal for use in high frequency applications. The device’s fast switching characteristics are thanks to its low drive voltage, which is typically around 4V for the AUIRFSL4310. In addition, the device has a low input capacitance, which decreases signal delay and reduces the amount of charge stored in the gate. This makes the AUIRFSL4310 ideal for high-speed switching and amplifying applications.
The AUIRFSL4310 is a single-Maroon-Gate FET which is ideal for those seeking a low-cost MOSFET with high current and voltage capabilities. The device is suited for a variety of applications, including motor and speed controllers, power converters and power MOSFET applications. In addition, the device offers a fast switching speed, low on-resistance, and a high-voltage breakdown rating, making it well-suited for high-speed amplification and switching.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
AUIRGS4062D1TRL | Infineon Tec... | 2.82 $ | 1000 | IGBT 600V 59A 246W D2PAKI... |
AUIRGP76524D0 | Infineon Tec... | 2.97 $ | 1000 | DIODE IGBT 680V 24A TO-24... |
AUIRGF76524D0 | Infineon Tec... | 3.23 $ | 1000 | DIODE IGBT 680V 24A TO-24... |
AUIRGP4062D1 | Infineon Tec... | 3.31 $ | 1000 | IGBT 600V 55A 217W TO247A... |
AUIRGP4062D1-E | Infineon Tec... | 3.34 $ | 1000 | IGBT 600V 55A 217W TO247A... |
AUIRGP4066D1-E | Infineon Tec... | 6.32 $ | 1000 | IGBT 600V 140A 454W TO-24... |
AUIRS2092STR | Infineon Tec... | -- | 15000 | IC AMP AUDIO 500W D 16SOI... |
AUIRGS30B60K | Infineon Tec... | 3.09 $ | 1000 | IGBT 600V 78A 370W D2PAKI... |
AUIRGS4062D1 | Infineon Tec... | -- | 459 | IGBT 600V 59A 246W D2PAKI... |
AUIRGR4045DTRL | Infineon Tec... | -- | 1000 | IGBT 600V 12A 77W DPAKIGB... |
AUIRG4PC40S-E | Infineon Tec... | 4.91 $ | 227 | IGBT 600V 60A 160W TO247I... |
AUIRGP66524D0 | Infineon Tec... | -- | 400 | IGBT 600V 60A 214W TO-247... |
AUIRGP35B60PD | Infineon Tec... | -- | 200 | IGBT 600V 60A 308W TO247A... |
AUIRGF65A40D0 | Infineon Tec... | -- | 250 | DISCRETESIGBT Through... |
AUIRGP4063D | Infineon Tec... | 7.8 $ | 125 | IGBT 600V 96A 330W TO-247... |
AUIRGP4066D1 | Infineon Tec... | 8.56 $ | 380 | IGBT 600V 140A 454W TO-24... |
AUIRG4BC30SSTRL | Infineon Tec... | 1.39 $ | 1000 | IGBT 600V 34A 100W D2PAKI... |
AUIRG4BC30USTRL | Infineon Tec... | -- | 1000 | IGBT 600V 23A 100W D2PAKI... |
AUIRGS30B60KTRL | Infineon Tec... | 1.93 $ | 1000 | IGBT 600V 78A 370W D2PAKI... |
AUIRGPS4067D1 | Infineon Tec... | 11.1 $ | 880 | IGBT 600V 240A 750W TO-27... |
AUIRGP4063D-E | Infineon Tec... | 7.8 $ | 75 | IGBT 600V 96A 330W TO-247... |
AUIRG4PH50S | Infineon Tec... | -- | 50 | IGBT 1200V 57A 200W TO247... |
AUIRGR4045D | Infineon Tec... | 1.82 $ | 1000 | IGBT 600V 12A 77W DPAKIGB... |
AUIRGU4045D | Infineon Tec... | 2.1 $ | 1000 | DIODE 600V IGBTIGBT Trenc... |
AUIRG4BC30U-S | Infineon Tec... | 2.21 $ | 1000 | IGBT 600V 23A 100W D2PAKI... |
AUIRGSL30B60K | Infineon Tec... | 3.09 $ | 1000 | IGBT 600V 78A 370W TO262I... |
AUIRGB4062D1 | Infineon Tec... | 4.24 $ | 1000 | IGBT 600V 59A 246W TO-220... |
AUIRGSL4062D1 | Infineon Tec... | 4.33 $ | 1000 | IGBT 600V 59A 246W TO-262... |
AUIRGDC0250 | Infineon Tec... | -- | 1000 | IGBT 1200V 141A 543W TO-2... |
AUIRGF66524D0 | Infineon Tec... | -- | 1000 | IGBT 600V 60A 214W TO-247... |
AUIRGP35B60PD-E | Infineon Tec... | 6.24 $ | 1000 | IGBT 600V 60A 308W TO247A... |
AUIRGP50B60PD1 | Infineon Tec... | 6.8 $ | 1000 | IGBT 600V 75A 390W TO247A... |
AUIRGP50B60PD1E | Infineon Tec... | 6.8 $ | 1000 | IGBT 600V 75A 390W TO247A... |
AUIRGP65A40D0 | Infineon Tec... | 7.18 $ | 1000 | DISCRETESIGBT Through... |
AUIRGP65G40D0 | Infineon Tec... | 7.28 $ | 1000 | IGBT 600V 62A 625W TO247I... |
AUIRGF65G40D0 | Infineon Tec... | -- | 1000 | IGBT 600V 62A 625W TO247I... |
AUIRGPS4070D0 | Infineon Tec... | -- | 1000 | IGBT 700V SUPER TO-247IGB... |
AUIRLU3114Z | Infineon Tec... | 1.8 $ | 724 | MOSFET NCH 40V 130A IPAKN... |
AUIRFSL6535 | Infineon Tec... | 2.41 $ | 487 | MOSFET NCH 300V 19A TO262... |
AUIRFS8408 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 195A D2PA... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...