Allicdata Part #: | IRAUIRFSL8403-ND |
Manufacturer Part#: |
AUIRFSL8403 |
Price: | $ 0.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 123A TO262 |
More Detail: | N-Channel 40V 123A (Tc) 99W (Tc) Through Hole TO-2... |
DataSheet: | AUIRFSL8403 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.77865 |
Vgs(th) (Max) @ Id: | 3.9V @ 100µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 99W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3183pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 93nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 70A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 123A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AUIRFSL8403 is a N-Channel low FET intended for pulse power and precision control applications. It is a rugged, high-performance device designed to provide maximum efficiency and reliability in a wide variety of circuits.
The AUIRFSL8403 has a small footprint, low RDS(on) and low gate charge which allow for a high current density and fast switching speeds. It is available in a variety of configurations, including 2, 6 and 10 W versions, with a gate threshold voltage range of 3.0V to 6.5V. The device is designed to provide superior thermal conduction in order to maximize power dissipation.
The AUIRFSL8403 offers a variety of features that make it an ideal choice for a wide range of applications. It is designed to provide superior electrical performance and superior thermal efficiency in challenging power applications. The device has a low gate charge, a low RDS(on), and a low on-resistance ratio to minimize power dissipation and maximize efficiency. In addition, the AUIRFSL8403 has a wide operating temperature range and offers excellent pulse-handling capabilities.
The AUIRFSL8403 application field mainly involves power amplifier and switching power supplies. This device is typically used in applications with high power density, such as in high power LED drivers, automotive power circuits, and audio amplifiers. The high current switching capability of the AUIRFSL8403 makes it a great choice for these applications. The device has a relatively low voltage drop, making it suitable for use in high-performance circuits. The low impedance of the device also makes it well suited for use in high-frequency circuits.
The working principle of an AUIRFSL8403 is fairly straightforward. In the “on” state, current flows through the device from source to drain. This is due to the voltage applied to the gate, which causes current to flow through the device. The drain-source voltage will remain low, as the FET is operating in the linear region. In the “off” state, the device will be in the non-conducting state, and the gate voltage will be low. This allows the device to be used as a switch.
In conclusion, the AUIRFSL8403 is a N-Channel low FET that is ideal for use in power amplifier and switching power supply applications. It has a low RDS(on), low gate charge, and a wide operating temperature range. It also provides excellent pulse-handling capabilities. The working principle is simple, and makes it a great choice for use in high power density, high-performance circuits.
The specific data is subject to PDF, and the above content is for reference
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