AUIRFSL8407 Allicdata Electronics
Allicdata Part #:

IRAUIRFSL8407-ND

Manufacturer Part#:

AUIRFSL8407

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 195A TO262
More Detail: N-Channel 40V 195A (Tc) 230W (Tc) Through Hole TO-...
DataSheet: AUIRFSL8407 datasheetAUIRFSL8407 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 150µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The AUIRFSL8407 is a transistor integrated circuit that\'s commonly used in power electronics and as a control and protection device. As a type of FET (Field-effect Transistor) or MOSFET (Metal Oxide Semiconductor FET), the AUIRFSL8407 is often the component of choice for applications with high voltage, high power, and low power loss.

The AUIRFSL8407 is a single-channel device; each housed package contains a single transistor active area that is connected to three output and two input terminals. Due to the device’s small size and low cost, it has become the preferred choice where there is an increase in the power requirement.

The AUIRFSL8407 is a N-channel MOSFET, which means that it has an internal gate structure that’s designed to conduct current flow in one direction only (in this case, from the Drain to the Source). It also has an internal diode structure that protects the transistor from overvoltage; this diode is triggered when the voltage across the Gate and Source exceeds a certain value.

The AUIRFSL8407 can operate in three different modes: Cut-Off, Active, and Saturation. Cut-off mode is where the transistor is off and does not conduct current; Active mode is where the transistor is able to conduct, but it is not at its peak performance; and Saturation is where the transistor is conducting as much current as it can.

This transistor can be used in a wide variety of applications. It is often used as an amplifier, voltage regulator, an on/off switch, or in various power control circuits. In power control circuits, the AUIRFSL8407 can be used to control the flow of current, or protect against overcurrent.

Due to its low power consumption, the AUIRFSL8407 can also be used in portable electronics where a long battery life is desired. It is also ideal for switching applications since its fast switching times enhance overall system performance.

In terms of its working mechanism, the AUIRFSL8407 is designed with a metal-oxide semiconductor gate structure. This gate structure is used to control the conduction of the Drain current through the MOSFET. The gate of the MOSFET is charged with a positive (Vgs>0) or negative voltage (Vgs<0) for the purpose of controlling the amount of current flowing from the Drain to the Source.

The current flow through the transistor is determined by the resistance of the channel, which is proportional to the voltage that’s applied to the Gate. When the voltage applied to the Gate is increased, the channel resistance decreases, allowing more current to flow through the Drain. On the other hand, when the voltage applied to the Gate is decreased, the channel resistance increases and less current is able to flow through the Drain.

The AUIRFSL8407 is a great choice for applications looking for powerful, reliable, and efficient transistor control. Its wide range of applications and working principles make it a well-rounded solution for any task. With a low cost and small size, it is a great option for those looking for excellent performance in a power-controlled system.

The specific data is subject to PDF, and the above content is for reference

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