Allicdata Part #: | AUIRFU3607-ND |
Manufacturer Part#: |
AUIRFU3607 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N CH 75V 56A I-PAK |
More Detail: | N-Channel 75V 56A (Tc) 140W (Tc) Through Hole I-PA... |
DataSheet: | AUIRFU3607 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3070pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 46A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Introducing AUIRFU3607
The AUIRFU3607 is a single insulated-gate field-effect transistor (IGFET) that provides excellent performance in a wide variety of applications. The device features a high power drain current (4 A) and a low threshold voltage (2 V). Its high speed switching and low on-resistance provide excellent efficiency in demanding power supply applications.
Advantages and Disadvantages of AUIRFU3607
The AUIRFU3607 has several advantages over other MOSFET devices. It is capable of working at high currents and low voltages, which makes it ideal for high speed switching and noise suppression applications. Additionally, the device has a relatively low on-resistance and can be easily implemented in several applications. However, the device does have some drawbacks, including a relatively high input capacitance and a large TCe, which is the temperature coefficient of the input capacitance.
Applications of the AUIRFU3607
The AUIRFU3607 is well suited to applications that require high current and low voltage switching, such as DC-DC converters, AC-DC converters, motor controllers, AC motor drivers, uninterruptible power supplies, and synchronous rectifiers. Additionally, the device can be used in a variety of noise suppression applications, such as EMI filters, power line filters, and telecom base stations. The device is also used in voltage regulator circuits, where the low on-resistance of the device makes it ideal for energy efficiency and improved performance.
Working Principle of AUIRFU3607
The AUIRFU3607 is an N-channel MOSFET device, which means it relies on the movement of electrons (instead of holes) to operate. When no gate voltage is applied to the device, it is in its off state. This is because the electron current is blocked from entering the device by a ruthenium-oxide gate. When a gate voltage is applied, the electron current can flow through the device, and the device enters its on state. This flow of electrons is extremely fast, which gives the AUIRFU3607 its high switching speed.
Conclusion
The AUIRFU3607 is a single insulated-gate field-effect transistor that provides excellent performance in a wide variety of applications. It is capable of working at high currents and low voltages, and can be used in a variety of noise suppression applications. The device\'s fast switching speed and low on-resistance make it the perfect choice for high-performance, energy-efficient applications.
The specific data is subject to PDF, and the above content is for reference
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