AUIRFU4104

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The AUIRF4104 is a N-Channel enhancement mode MOSFET employing advanced planar technology. This high density cell design provides low on-resistance per unit area that ensures high speed switching and low thermal resistance for increased efficiency and reliability in dissipation. This MOSFET is designed to handle currents up to 33A and voltage up to 100V, making it highly suitable for many consumer and industrial applications.

The AUIRF4104 employs an enhanced MOSFET structure with a “floating” drain region that allows a low Rdson in order to improve switching performance and reduce power dissipation. It also features a unique high voltage temperature shutdown circuit (TDS) which enables it to protect itself from over temperature situations of up to 135°C. This circuit eliminates the need for external over temperature protection devices, increasing reliability and reducing circuit complexity. The AUIRF4104 is manufactured in an ISO 9001 compliant facility and is tested for compliance to Mil-Std-883 and other quality standards to ensure its long-term reliability.

The AUIRF4104 is a popular choice for many consumer and industrial applications requiring precise high-speed switching and low-power dissipation. It is ideal for use in automotive, industrial, medical, and communications systems, as well as other applications where high efficiency and reliability are paramount. Its low on-resistance, low thermal resistance, and the TDS circuit make it the ideal choice for designs requiring an efficient, reliable, and low footprint MOSFET solution.

The AUIRF4104 operates using a basic enhancement mode MOSFET structure where a voltage applied across the gate and source terminals influences the conductive channel between the source and the drain. A positive gate voltage will create a conductive channel, allowing current to flow between the source and the drain. A negative gate voltage will deactivate the MOSFET and stop the flow of current. This inverse relationship between gate voltage and channel resistance is what allows the MOSFET to act as an electronically-controlled switch. The on-resistance of the MOSFET is also influenced by the drain-source voltage, so it is important to take this into account when designing the power supply for a circuit incorporating the AUIRF4104.

In conclusion, the AUIRF4104 is a high-performance, N-channel MOSFET designed to handle high currents and voltages and provide high speed switching and low thermal resistance. It offers excellent switching performance and power dissipation, combined with a built-in TDS circuit to provide over temperature protection. It is ideal for many consumer and industrial applications requiring precise switching and low-power dissipation.

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