Allicdata Part #: | AUIRFZ24NS-ND |
Manufacturer Part#: |
AUIRFZ24NS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 17A D2PAK |
More Detail: | N-Channel 55V 17A (Tc) 3.8W (Ta), 45W (Tc) Surface... |
DataSheet: | AUIRFZ24NS Datasheet/PDF |
Quantity: | 780 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 370pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AUIRFZ24NS belongs to the category of single field-effect transistors (Single FETs): specifically, a single metal-oxide-semiconductor field-effect transistor (MOSFET). This type of transistor is used to control a variety of circuits as an electronic switch or amplifier. MOSFETs are used in a wide range of electronic applications, including mobile devices, computers, and other consumer electronic devices.
The AUIRFZ24NS is a power MOSFET, which is designed to handle larger currents and voltages than other MOSFETs. It consists of a gate oxide, a silicon substrate, and a pair of conductive electrodes (source and drain). A gate voltage applied between the gate and source terminals of the device controls a corresponding current flowing between the source and drain. The MOSFET is an ideal device for use in applications that require accurate current control or amplification.
The AUIRFZ24NS is particularly well-suited for use as an amplifier in audio applications. It provides high fidelity and low distortion due to its low input capacitance and excellent high frequency capabilities. It has very low internal gate capacitance and gate-to-drain capacitance. This means that it can provide very high gains and low noise at high frequencies. It also has superior switching performance, and can be used to efficiently switch between high and low power states.
The AUIRFZ24NS is a very versatile device, and can be used in a wide range of applications. It can be used as an intelligent switch, as a variable gain amplifier, as an active filter or in power converters. Additionally, it can be used as a voltage regulator, a surge protector or in low-voltage switch-mode power supplies. It can also be used in multiplexers and level shifters, and is capable of very low-noise operation in these applications.
The working principle of the AUIRFZ24NS is based on the principle of capacitive coupling between the gate and source terminals. When a gate voltage is applied between the gate and source terminals, it induces an electric field that induces a charge in the gate oxide material. This charge then forms a capacitor that allows a current to flow between the source and drain terminals. The current is proportional to the gate voltage. This current can be used to control other devices, such as transistors, resistors, and diodes, as well as other circuits.
In conclusion, the AUIRFZ24NS is a single field-effect transistor (Single FET), which is a MOSFET designed to handle larger currents and voltages and is used to control a variety of circuits as an electronic switch or amplifier. It has a capacitive coupling principle which enables it to provide very high gains and low noise at high frequencies. Its versatility makes it suitable for use as an intelligent switch, as a variable gain amplifier, as an active filter or in power converters, as a voltage regulator, a surge protector or in low-voltage switch-mode power supplies. Its wide range of applications and performance capabilities make it a perfect choice for any designer looking for a reliable, power-efficient device.
The specific data is subject to PDF, and the above content is for reference
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