Allicdata Part #: | AUIRFZ24NSTRR-ND |
Manufacturer Part#: |
AUIRFZ24NSTRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 17A D2PAK |
More Detail: | N-Channel 55V 17A (Tc) 3.8W (Ta), 45W (Tc) Surface... |
DataSheet: | AUIRFZ24NSTRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 370pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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A unified interface resistor field effect transistor, or AUIRFZ24NSTRR, is a semiconductor device that is used in a variety of digital and analog applications. It is a kind of FET (Field Effect Transistor), and is a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). It is typically used as a switch or an amplifier. As a switch, it can route a signal or current between two external terminals, and as an amplifier, it can provide voltage or current amplification. It is also used in many analog applications such as low-noise amplifiers, low distortion amplifiers, high-speed amplifiers, current mirrors, and video amplifiers.
The AUIRFZ24NSTRR is a single gate FET, which means that there is only one controllable terminal to gating the current flow when compared to the dual gate FETs. It contains only one terminal gate which is connected to the substrate of the N-type semiconductor material. When connected, the gate creates a channel that, when properly biased, allows current to flow from the drain to the source terminal.
The working principle of the AUIRFZ24NSTRR is effective and simple. When a voltage is applied to the gate, an electric field is created around the gate and the channel connecting the drain and the source. This field changes the shape of the channel, impacting the resistance of the channel and allowing more or less current to flow through it. This is how the AUIRFZ24NSTRR is able to act as an amplifier or a switch. The strength of the voltage at the gate dictates how much current flows through the source and drain, thus controlling the current and voltage gain.
There is a lot of flexibility with the AUIRFZ24NSTRR, as it can be used as a switch or an amplifier in both analog and digital circuits. Its structure makes it well-suited for high-speed switching, as the gate voltage can be quickly changed with minimal current, allowing the AUIRFZ24NSTRR to act as a fast digital switch. It is also great for low-noise and low-distortion analog amplifiers, as the resistance of the channel can be accurately controlled. All in all, the AUIRFZ24NSTRR is a versatile and useful semiconductor device.
The specific data is subject to PDF, and the above content is for reference
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