Allicdata Part #: | AUIRFZ44VZS-ND |
Manufacturer Part#: |
AUIRFZ44VZS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 57A D2PAK |
More Detail: | N-Channel 60V 57A (Tc) 92W (Tc) Surface Mount D2PA... |
DataSheet: | AUIRFZ44VZS Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 92W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1690pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 34A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 57A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRFZ44VZS FET is a high-performance, low-gate-charge, N-channel, enhancement-mode device that utilizes super-junction technology while achieving a very low on-resistance. This FET is an excellent choice for applications that require low drain-source ON resistance and higher power dissipation. It is especially suitable for industrial and consumer applications that require a high level of efficiency.
AUIRFZ44VZS is a high-voltage field-effect transistor (FET) which has a wide range of applications such as medical, automotive, industrial, and telecommunications systems. It is a single FET with a typical drain-source breakdown voltage of 100 V, a maximum drain current of 4 A, and a maximum drain-source on-resistance of 0.003 Ohm The FET has a low gate-charge and a strong gate drive capability. It can also handle high-frequency operation, making it suitable for switching applications.
The working principle of the AUIRFZ44VZS is based on the flow of electrons through the device. When a positive voltage is applied to the gate of the FET, electrons are attracted and enter the channel between the source and drain. This in turn creates a conductive channel between the source and drain and allows current to flow freely. The current is determined by the gate-source voltage and the degree of pinch-off. When the gate-source voltage reaches the threshold voltage, the channel pinch-off, resulting in a saturation regime which allows for an increase in the current capacity.
When a negative voltage is applied to the gate of the FET, the current through the channel is reduced due to an effect called “inversion”, where electrons are repelled from the channel. This in turn reduces the conduction across the channel, effectively acting as a switch which limits the current through the device. This is known as the cutoff regime, wherein the current flow through the device is permanently cut off. This makes the FET an ideal choice for use as an electronically controlled switch.
The AUIRFZ44VZS has a wide range of applications in medical, automotive, industrial and telecommunications systems. It is an ideal choice for applications requiring increased efficiency, high-performance switching and low drain-source ON resistance. The device is particularly well-suited for use in power supplies, power regulators and high-current / high-voltage switching systems.
The specific data is subject to PDF, and the above content is for reference
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