Allicdata Part #: | AUIRFZ44VZSTRL-ND |
Manufacturer Part#: |
AUIRFZ44VZSTRL |
Price: | $ 0.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 57A D2PAK |
More Detail: | N-Channel 60V 57A (Tc) 92W (Tc) Surface Mount D2PA... |
DataSheet: | AUIRFZ44VZSTRL Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.89081 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 92W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1690pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 34A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 57A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A MOSFET, or metal-oxide-semiconductor field-effect transistor, is one of the basic transistor types used to control electronic circuits. The “metal-oxide-semiconductor” part of its name comes from the fact that it uses a metal gate electrode, an oxide insulating layer, and a semiconductor substrate — usually silicon. The “field-effect” portion of its name comes from the fact that its operation is based on the electrical field created by the metal gate electrode.
MOSFETs operate by controlling the resistance between its source and drain terminals. This resistance is determined by the electrical field created by the gate voltage, which allows it to be used as an electronically-controlled switch. The MOSFET also has an extremely high input resistance, which means that a small amount of gate current is needed to control a relatively large amount of drain current. This property makes the MOSFET an ideal device for use in low-power digital circuits.
The AUIRFZ44VZSTRL is a single-gate, vertical-channel, insulated-gate field-effect transistor (IGFET). It is designed for use in switching, linear, and low-noise applications. This type of IGFET has a low on-state resistance and is made with a highly reliable polysilicon gate and dual P-type source and drain contacts.
The AUIRFZ44VZSTRL has a wider range of possible applications than other IGFETs because it has a higher drain-source breakdown voltage, as well as a temperature-compensating feature that improves reliability. Its lower noise figure also makes it an ideal choice for audio applications. Additionally, its low power consumption and wide variations in threshold voltage make it a versatile device. It can be used in switching circuits, as well as in sensors, amplifiers, and digital logic.
The working principle of the AUIRFZ44VZSTRL is based on the transfer of electrons between its gate, drain, and source terminals. When a voltage is applied to the gate terminal, it creates an electric field that attracts electrons from the channel region between the source and drain and onto the gate terminal, resulting in a change in the resistance between the drain and source terminals. This difference in resistance causes an increase in the drain current and allows the AUIRFZ44VZSTRL to be used as a switch.
The AUIRFZ44VZSTRL is a versatile device that offers a wide range of possible applications. Its versatility, low power consumption, and low noise figure make it a great choice for a wide variety of applications, including audio, switching, linear, and low-noise applications. This type of IGFET has become increasingly popular in recent years and is expected to continue to be in high demand in the near future.
The specific data is subject to PDF, and the above content is for reference
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