Allicdata Part #: | AUIRFZ44ZS-ND |
Manufacturer Part#: |
AUIRFZ44ZS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 51A D2PAK |
More Detail: | N-Channel 55V 51A (Tc) 80W (Tc) Surface Mount D2PA... |
DataSheet: | AUIRFZ44ZS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 80W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1420pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 13.9 mOhm @ 31A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 51A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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A FET (Field Effect Transistor) is a type of transistor that uses an electric field to control the flow of electrons or electrical current between source and drain terminals. It works by using an electric field to modulate the conductivity of a semiconductor material. The FET is one of the most widely used types of transistors in electronic circuit designs. The FET is also known as a “JFET” (Junction Field Effect Transistor).
An AUIRFZ44ZS is a type of FET (Field Effect Transistor) which is a single-source Field-Effect Transistor. It is a highly reliable single FET with excellent performance in the most demanding operating environments. It has a wide range of applications, including infrared sensing and communication applications, motor drives, and switch-mode power supply (SMPS) systems. It is also suitable for consumer electronics and automotive applications.
The working principle of the AUIRFZ44ZS is based on the concept of field effect. It consists of a p-type semiconductor (for example, silicon) as the source and drain of the device. When a potential is applied between the source and the drain, the voltage field in between will create a two-dimensional channel to the substrate. As the applied voltage field increases, the channel width increases, which allows for increased current. When the applied voltage is lowered, the channel width decreases, which reduces the current. Thus, the AUIRFZ44ZS acts as a current regulator.
The AUIRFZ44ZS can be used in various applications such as power management, safety systems, lighting control, communication networks, automotive electronics, and industrial automation. It can also be used in medical devices, personal computers, GPS devices, and other consumer electronic products. The device offers features such as low power consumption, high switching speed, high reliability, and low cost.
The AUIRFZ44ZS is a single gate FET, which means that it is designed with one gate, rather than two. The single gate allows for more efficient operation, since it can be operated with an internal circuit, rather than an external circuit. This also results in improved power efficiency, and allows for a smaller form factor, making it suitable for applications where size is a factor.
In conclusion, the AUIRFZ44ZS is a single-source Field-Effect Transistor that is widely used for a variety of applications. It works by using an electric field to modulate the conductivity of a semiconductor material and offers features such as low power consumption, high switching speed, and high reliability. With its low cost, small form factor, and improved power efficiency, it is a desirable solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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