AUIRFZ44ZSTRL Allicdata Electronics
Allicdata Part #:

AUIRFZ44ZSTRL-ND

Manufacturer Part#:

AUIRFZ44ZSTRL

Price: $ 0.87
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 51A D2PAK
More Detail: N-Channel 55V 51A (Tc) 80W (Tc) Surface Mount D2PA...
DataSheet: AUIRFZ44ZSTRL datasheetAUIRFZ44ZSTRL Datasheet/PDF
Quantity: 1000
800 +: $ 0.78230
Stock 1000Can Ship Immediately
$ 0.87
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 80W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 31A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AUIRFZ44ZSTRL is a MOSFET device that is used in many applications. It is commonly used in power mux and signal switch applications due to its low on resistance and high current capability. The AUIRFZ44ZSTRL is available in two different packages: the SOT-223 and the SOT-89, allowing users to choose depending on their application needs. The AUIRFZ44ZSTRL is a N-Channel MOSFET, meaning it can only be used to conduct current in one direction, from the source to the drain. This is due to the type of gate that is used, the N-channel enhancement mode gate which offers the user a high input impedance and a low output impedance. The device is also protected from latch-up due to the internal diode formed between the drain and the source.

The main function of this device is to act as a switch in applications where low RDS(on) and high current capability are required. It is capable of a maximum input voltage of -45V, a maximum drain current of 4.8A and a maximum RDS(on) of 28mΩ when operated at 10V. The other important characteristics include low gate charge, Avalanche ruggedness and ESD protection.

The working principle of the AUIRFZ44ZSTRL is based on the MOSFET structure. It is basically a three terminal device, with a source, a gate and a drain. The gate is the control terminal, which can be used to control the current flow between the source and the drain. When the gate-source voltage is above the threshold voltage, the MOSFET is said to be in the “on” state and it will conduct current from the drain to the source. When the gate-source voltage is less than the threshold voltage, the MOSFET is in the “off” state and it will not conduct current. This allows the user to use the AUIRFZ44ZSTRL as an electronic switch in his circuit.

The typcal application of the AUIRFZ44ZSTRL includes in power switch applications such as computer peripherals, automotive infotainment systems, regulated motor drives, and battery chargers. This device can also be used in many signal switching applications such as mobile phones, automotive audio systems, and game controllers. Due to its low RDS(on) and high current capability, it is also commonly used in LED drivers power supplies and Class D amplifiers.

In conclusion, the AUIRFZ44ZSTRL is a very useful device with a wide range of applications. Its low RDS(on) and high current capability make it an ideal choice for many applications. Its N-channel enhancement mode structure allows the user to use it as an electronic switch in his circuit and the internal diode formed between the drain and source protects it from latch-up. It is an important device in many applications, from computer peripherals and automotive systems to LED drivers and Class D amplifiers.

The specific data is subject to PDF, and the above content is for reference

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