Allicdata Part #: | AUIRFZ48N-ND |
Manufacturer Part#: |
AUIRFZ48N |
Price: | $ 0.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N CH 55V 69A TO-220AB |
More Detail: | N-Channel 55V 69A (Tc) 160W (Tc) Through Hole TO-2... |
DataSheet: | AUIRFZ48N Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.70995 |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 69A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AUIRFZ48N is an integrated power module developed by Infineon Technologies, a German semiconductor manufacturer. It is a vertical power MOSFET designed for use in high voltage, high current switching applications.
The AUIRFZ48N is categorized as a single field-effect transistor (FET). FETs are transistors that are composed of three or more terminals (source, gate, and drain), and their main function is to control the flow of current between the source and the drain. FETs are voltage-controlled semiconductor devices in which the current between the source and the drain is dependent upon the voltage at the gate terminal.
FETs can be further divided into two categories - MOSFETs (Metal Oxide Semiconductor FET) and JFETs (Junction FET). MOSFETs are widely used in modern electronics due to their superior characteristics, such as high input resistance, very low input capacitance, and low-noise operation. The AUIRFZ48N is a N-channel MOSFET, meaning it uses an N-channel of silicon to control the movement of electrons between the source and the drain. An N-Channel MOSFET also has a source and a gate, which are required for the FET to work.
The working principle of the AUIRFZ48N is based on two important factors: the drain-source voltage and the gate voltage. When the gate voltage is greater than the source-drain voltage, current will flow from source to drain, which is known as the "on" state. When the gate voltage is lower than the source-drain voltage, the current will be blocked, and the FET will be in the "off" state. This process is called "Voltage-Controlled Switching".
The AUIRFZ48N is optimized for high voltage and high current applications, making it an ideal choice for applications such as switching power supplies and high current motor control. It features low power dissipation, is capable of operating at high temperature and high current levels, and is also relatively easy to drive. Its applicability to such applications has resulted in the AUIRFZ48N becoming a popular choice for various electronics and industrial projects.
In conclusion, the AUIRFZ48N is an integrated power MOSFET designed for high voltage and high current switching applications. It is categorized as a single field-effect transistor with a N-channel MOSFET structure. Its working principle is based on voltage-controlled switching, and it is optimized for usage in a wide variety of electronic and industrial projects.
The specific data is subject to PDF, and the above content is for reference
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