AUIRFZ48ZS

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AUIRFZ48ZS is a compact and powerful MOSFET (metal-oxide semiconductor field-effect transistor) with a wide range of applications in Electro-Magnetic Interference (EMI) protection and electronic control. The device is a double-sided insulated gate bi-directionally rated FET which has a low static drain-source on-resistance of 0.5Ω. It is also highly stable with an inherently low Miller plateau voltage, providing superior noise immunity.

The AUIRFZ48ZS is a versatile device, and is suitable for a wide range of applications including power switching, switching control, pulse width modulation, amplification, and other general-purpose applications. It offers excellent electrical parameters, with a typical on-state resistance of 0.25Ω and a drain-source breakdown voltage of 300V. The device also has a wide operating temperature range of -55°C to 175°C, allowing for a great amount of flexibility in application.

The device has a simple working principle. It is a voltage-controlled device, meaning its output current is a result of the voltage applied at the gate. When the gate voltage is above the threshold voltage, it is said to be "on" and the drain current is at its maximum. Conversely, when the gate voltage is below the threshold voltage, the FET is said to be "off" and the drain current is at its minimum. This means that the AUIRFZ48ZS can be used as an efficient on/off switch to control the flow of current through a circuit.

In addition to its on/off switch capability, the AUIRFZ48ZS can be used to regulate the flow of current, as its gate voltage controls the drain current. This makes it an ideal choice for use in control applications, such as the linearly varying control of current output which is used in various power electronics applications. For example, the device can be used in regulators, dc-dc converters and amplifiers, where the magnitude of the output current is regulated by the output voltage applied to the gate.

The device is also well-suited for use in EMI protection circuits. It can be used as a voltage clamp or as an EMI filter between an input and output signal. By controlling the source-drain current with the gate voltage, the device can selectively suppress signal noise, making it an ideal choice for EMI protection.

The AUIRFZ48ZS is a compact and powerful MOSFET, with a wide variety of applications in EMI protection and electronic control. Its low on-state resistance and wide operating temperature range make it an ideal choice for any application where an efficient on/off switch or current control is required. Its versatility also makes it suitable for use in EMI protection circuits, making it an all-around device for use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference