Allicdata Part #: | AUIRL2203N-ND |
Manufacturer Part#: |
AUIRL2203N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 100A TO-220AB |
More Detail: | N-Channel 30V 75A (Tc) 180W (Tc) Through Hole TO-2... |
DataSheet: | AUIRL2203N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3290pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The AUIRL2203N is a field effect transistor (FET) designed for motor control and power supply applications. It consists of one N-channel MOSFET in addition to a low on-state resistance (RDS(on)). The device is optimized for use with low gate charge and fast switching times, making it an ideal choice for high-power converters and motor control applications.
The operating principle of the AUIRL2203N can be explained as follows: when the gate voltage is applied to the gate terminal, it creates a depletion layer that effectively reduces the conductivity of the channel between the source and drain terminals. This reduces the current flow between the source and drain. The amount of current that can flow is further controlled by the gate voltage, which is responsible for controlling the size of the depletion layer. By increasing the gate voltage, more current can flow and vice versa.
In terms of application, the AUIRL2203N is generally used to control the power supply of high-power converters and motor control applications. Its low on-state resistance (RDS(on)) allows high-speed switches to be used in place of traditional switches for faster reaction times. Due to its low gate charge, it can also be used for switching high-current applications, making it an ideal choice for controlling a wide range of motor control applications.
Additionally, the AUIRL2203N can be used for applications such as driving LED lighting, controlling low-power motors, or providing low-voltage auxiliary power for microcontrollers. For motor control applications, it can be used to control the movement speed and direction of a motor by varying the voltage across the gate.
In conclusion, the AUIRL2203N is an N-channel MOSFET optimized for use in high-power converters and motor control applications. It is ideal for use with low gate charge and fast switching times, and can be used to control the power supply of high-power converters, drive LED lighting, control low-power motors, or provide low-voltage auxiliary power for microcontrollers.
The specific data is subject to PDF, and the above content is for reference
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