Allicdata Part #: | AUIRL3705ZSTRLCT-ND |
Manufacturer Part#: |
AUIRL3705ZSTRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 75A D2PAK |
More Detail: | N-Channel 55V 75A (Tc) 130W (Tc) Surface Mount D2P... |
DataSheet: | AUIRL3705ZSTRL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2880pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 52A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Cut Tape (CT) |
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The AUIRL3705ZSTRL is a 60 volt N–Channel enhancement mode MOSFET with an extremely low on-resistance. It is designed for switching applications and offers with a maximum current rating of 33A (Tc=25℃ and VGS=10V).
The AUIRL3705ZSTRL is widely used in the fields of automotive, solar and power applications, such as battery chargers, DC to DC converters, DC to AC converters, solar inverters, photovoltaic and fuses. It also can be used in audio amplifiers, motor drive circuits, power supply and dimmers. Furthermore, it can be used in a variety of applications including motor speed control, battefy monitor, and high side mosfet drivers.
The AUIRL3705ZSTRL operating principle is simple but effective in enabling efficient power management. The MOSFET acts as a voltage-controlled switch, allowing current to flow through it when a voltage is applied to its gate terminal. The current will flow from the source to the drain of the transistor, as long as the gate voltage is greater than the source voltage. It is an enhancement mode MOSFET, which means it requires an externally applied voltage to switch from an “off” to an “on” state, and vice versa. Threshold voltage is the voltage required to turn the MOSFET on, which is normally around 4 volts.
The structure of AUIRL3705ZSTRL consists of a silicon substrate, gate oxide, source diffusion and a drain diffusion. There is a P-N junction created between the substrate and the source diffusion, and another P-N junction between the substrate and the drain diffusion. The gate oxide acts as an insulator, keeping the source and drain diffusions physically separated. The gate voltage controls these two diffusions and causes current to flow between the source and the drain.
The AUIRL3705ZSTRL has several advantages compared to other power management devices, such as its wide operating voltage range and low on-resistance. It offers an extremely low on-resistance of 0.06 ohms, which makes it ideal for high-frequency switching applications. The device can also operate within a wide voltage range, from -2V up to -60V. These features make it a good choice for power supplies, motor control, audio amplifiers and other applications requiring efficient power management.
In conclusion, the AUIRL3705ZSTRL is a 60 volt N–Channel enhancement mode MOSFET with an extremely low on-resistance designed for switching applications. It offers exceptional performance with its wide operating voltage range and low on-resistance, making it the perfect choice for power management applications requiring efficient operation. The device is widely used in automotive, electrical and solar applications, audio amplifiers, motor drive circuits and power supplies. As the AUIRL3705ZSTRL works by acting as a voltage-controlled switch, enabling current to flow between its source and drain, it is an effective component in numerous applications.
The specific data is subject to PDF, and the above content is for reference
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