Allicdata Part #: | AUIRLL2705-ND |
Manufacturer Part#: |
AUIRLL2705 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 5.2A SOT223 |
More Detail: | N-Channel 55V 5.2A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | AUIRLL2705 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.2A (Ta) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The AUIRLL2705 is a single N-Channel MOSFET with a current rating of 77A and a voltage rating at the drain of 120W. It is designed for high power applications and offers low RDSon (< 0.0014Ω). The device is capable of switching higher power loads, such as inductive and power resistive. It has an integrated fast and soft switching built into the gate structure. The intrinsic ruggedness and the low RDSon of the MOSFET minimize potential system-level issues such as EMI/EMC noise and power dissipation.
This MOSFET is suitable for many applications, including multiple power conversion stages, acting as the switch in a synchronous rectifier circuit, load switching, power supply primary and secondary stages, and SMPS. Additionally, it is well suited for automotive systems, LED driver/ballast/lighting applications, industrial motor/drive applications, and battery charger applications.
The AUIRLL2705 MOSFET offers high-speed switching, with reduced switching losses due to low gate charge. It features both low input capacitance and low gate resistance for fast switching performance. Additionally, its high drain current rating, large service operation temperature, and fast switching speeds enable the device to handle higher power loads with minimal energy losses.
The MOSFET’s working principle is based on the generation and flow of electricity through channels formed in a semiconductor material. When a voltage is applied to the gate, it creates an electrostatic field that attracts electrons and forms a conducting channel between the source and the drain terminals. This allows current to flow through the device and controls the output voltage level. The MOSFET also has current limiting capabilities and can be used to control multiple power stages.
The AUIRLL2705 MOSFET can also be used as a switching device and offers the capability of switching higher voltages. When an electric field is applied to the gate, it causes electrons to enter the channel and form a conducting channel between the source and drain terminals. This allows current to flow through the device and control the circuit’s output voltage level.The device is capable of efficiently switching loads and is thus suitable for many power conversion applications.
When used in applications such as switching, the AUIRLL2705 possesses a unique advantage over other power semiconductors. As there is no physical contact between the gate and the other terminals, the MOSFET has the ability to deliver extremely fast switching times without generating significant voltage spikes or power losses. The speed at which the device acts makes it ideal for use in high-speed switching applications.
In summary, the AUIRLL2705 single N-Channel MOSFET is an efficient and versatile solution for a wide range of power conversion applications. The MOSFET’s low RDSon, fast switching capabilities and current limiting properties make it an ideal solution for many applications. Its robust design, wide service operation temperature, and ultra-fast switching capabilities make it well suited for high power applications in automotive, industrial and consumer markets.
The specific data is subject to PDF, and the above content is for reference
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