AUIRLR120N Allicdata Electronics
Allicdata Part #:

AUIRLR120N-ND

Manufacturer Part#:

AUIRLR120N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 10A DPAK
More Detail: N-Channel 100V 10A (Tc) 48W (Tc) Surface Mount D-P...
DataSheet: AUIRLR120N datasheetAUIRLR120N Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 185 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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OUIRLR120N is a type of field effect transistor (FET) manufactured by a leading semiconductor manufacturer. It is commonly used in many commercial, industrial and consumer electronic applications. The OUIRLR120N is a low-cost, low-power MOSFET, suitable for high-current switching applications.

The FET is characterized as a single-gate, depletion-mode device with an ON-resistance rating of 120 volts/20 amp. This means that the ON-resistance rating of this FET is 120 volts per 20 amperes, which is quite good for many circuit designs, requiring low-power components. The IRFET is also characterized as a 4- Source/6-drain device and is rated at a VDSS (Drain-to-Source Voltage) of 60V.

The working principle of the OUIRLR120N is based on capacitive coupling and the mutual effect of three capacitors, namely the source capacitor, the drain capacitor, and the gate capacitor. These three capacitors create an electric field between the source and the drain, and this electric field can be modulated using the gate voltage. The presence of the gate voltage causes a charge transfer from the source to the drain, and results in the flow of current.

The current flow in the device is controlled by the gate voltage, and this phenomenon is known as a field effect or a voltage-controlled current. When the gate voltage is increased, the electric field increases, and the current flow increases, and vice-versa. This property of a FET makes it highly attractive for high-current switching applications, as the current flow can be easily controlled by controlling the gate voltage.

OUIRLR120N is used in a variety of applications, including audio amplifiers, DC-DC converters, switching power supplies, solid state lighting, class-D audio and motor control solutions. It is also suitable for automotive applications, due to its low ON-resistance and high-current switching capability. In addition, it is also compatible with most analog circuitry and encryption solutions.

In conclusion, the OUIRLR120N is a low-cost and low-power MOSFET, suitable for high-current switching applications. It offers excellent performance and is compatible with most analog and encryption solutions. This makes it suitable for a wide range of applications, from consumer electronic products to automotive and industrial electronics. Therefore, the OUIRLR120N is an excellent device for many applications, and is sure to continue to be popular for many years to come.

The specific data is subject to PDF, and the above content is for reference

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