Allicdata Part #: | AUIRLR3410TR-ND |
Manufacturer Part#: |
AUIRLR3410TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 17A DPAK |
More Detail: | N-Channel 100V 17A (Tc) 79W (Tc) Surface Mount D-P... |
DataSheet: | AUIRLR3410TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AUIRLR3410TR is a single-channel, logic-level enhancement-mode Field-Effect Transistor (FET). It is built on a copper lead frame and it uses a proprietary, advanced chip design that features a high-resistivity silicon-on-insulator (SOI) gate electrode to produce unparalleled avalanche characteristics, very low on-resistance and low gate capacitance. This makes the AUIRLR3410TR well suited for many different applications such as power switching, load switching, low-side switching, load drivers and level shifters. Additionally, due to its low on-resistance and high-speed switching capability, the AUIRLR3410TR has long been considered to be an ideal transistor for high frequency inverters, motor control and other current-limited loads.
The working principle of the AUIRLR3410TR is fairly simple. Its construction consists of a semiconductor material with a source and a drain terminal and a gate electrode. The gate electrode is connected to an external control voltage. When a positive voltage is applied to the gate, the transistor is turned on, allowing current to flow from the source to the drain. When the gate voltage is lowered, the transistor turns off and the current stops flowing. The transistor can also be “pulsed” by quickly switching the gate voltage from high to low, creating a controlled increase in current.
The Field-Effect Transistor (FET) has long been used as a prominent switching device in modern-day electronics. With the addition of the AUIRLR3410TR, transistors now offer superior performance for systems that require low power but high current levels. Furthermore, the AUIRLR3410TR is robust, reliable and able to handle temperature extremes, making it ideal for high-temperature and extreme environment applications. Additionally, the AUIRLR3410TR is compatible with the majority of gate drive components, allowing ease of integration into existing designs.
The AUIRLR3410TR provides many advantages over traditional transistors, including lower on-resistance, lower gate capacitance and faster switching speeds. Additionally, its cascade technology helps create a low profile, allowing it to fit into tight spaces. Its logic-level enhancement-mode also eliminates the need for a pull-up resistor, resulting in simplified interface logic.
The AUIRLR3410TR is a highly reliable and cost-effective transistor solution for many applications. Its key features and advantages make it an ideal choice for high-frequency inverters, motor control, current-limited loads and other power switching needs. Furthermore, its SOI gate electrode provides superior avalanche characteristics and low on-resistance for even more intense applications. With its robust, reliable construction and its ability to handle temperature extremes, the AUIRLR3410TR is an excellent, cost-effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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