AUIRLR3410TRL Allicdata Electronics
Allicdata Part #:

AUIRLR3410TRLTR-ND

Manufacturer Part#:

AUIRLR3410TRL

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 17A DPAK
More Detail: N-Channel 100V 17A (Tc) 79W (Tc) Surface Mount D-P...
DataSheet: AUIRLR3410TRL datasheetAUIRLR3410TRL Datasheet/PDF
Quantity: 1000
3000 +: $ 0.48646
Stock 1000Can Ship Immediately
$ 0.54
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V
Series: Automotive, AEC-Q101, HEXFET®
Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AUIRLR3410TRL is a single, n-channel enhancement mode, MOS-FET type, Field Effect Transistor (FET). It has a robust, low-cost and highly efficient design, making it a versatile and popular choice for a wide range of applications. The AUIRLR3410TRL is suitable for high-side driving applications such as electronic fuel injection and motor control. This product is a very durable and cost effective device that can operate at temperature up to 175°C. The low on-state resistance enhances power efficiency, while the low ESD susceptibility eliminates the need for additional protection circuitry. The auIRLR3410TRL is a highly reliable and rugged device that can provide excellent performance in all types of environments.

The working principle of AUIRLR3410TRL, is based on the functionality of a Field Effect Transistor (FET). A FET is a type of transistor that uses an electric field to control the flow of current. A FET consists of three terminals: source, drain and gate. When a voltage is applied between source and drain, the gate voltage controls the amount of current that flows from source to drain. Hence, FETs are considered voltage-controlled devices, as opposed to transistors, which are current-controlled devices. The gate voltage in a FET can be adjusted by applying an external voltage or modulating it using an integrated circuit such as an amplifier or oscillator.

The application field of AUIRLR3410TRL includes electronic fuel injection, motor control, and higher-voltage driving applications. The device is well-suited for drive applications which require a high degree of voltage controllability. AUIRLR3410TRL can provide clean and precise power output, with an extremely low on-state resistance. It is able to handle currents up to 30 Amps, making it ideal for high power driving applications. It also has a low total gate charge of 12 nC, which makes it an excellent choice for high frequency switching applications.

AUIRLR3410TRL is also a suitable choice for motor control applications. The device provides low on-state resistance, allowing for high power output with minimal power dissipation. Additionally, it offers maximum blocking voltage of 550V and continuous drain current of 30A. This makes it suitable for applications with high voltage and high power requirements. The device also has a rugged construction and is capable of operating at temperatures up to 175°C.

Overall, the AUIRLR3410TRL is a versatile and reliable single n-channel MOS-FET. This device offers a low on-state resistance and low ESD susceptibility with a robust and highly efficient design. It is suitable for high-side driving applications, electronic fuel injection and motor control. This device is also suitable for higher-voltage driving applications, with a maximum blocking voltage of 550V and a continuous drain current of 30A. The AUIRLR3410TRL is a durable and cost-effective solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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