Allicdata Part #: | AUIRLS3034-ND |
Manufacturer Part#: |
AUIRLS3034 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 343A D2PAK |
More Detail: | N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount D2... |
DataSheet: | AUIRLS3034 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10315pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 162nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 195A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRLS3034 is one of the most popular single-channel field-effect transistors, or FETs. A FET is an electronic device whose flow of current is induced by an electric or magnetic field and can be used for switching, amplifying or routine signal modulation. The AUIRLS3034 is a high performance, low-cost FET with a low on-channel resistance that is suitable for a host of applications.
The AUIRLS3034 is a 3-terminal, depletion type MOSFET. Unlike a bipolar junction transistor (BJT), which uses a combination of atom P and N layers to regulate the passage of electrons, a MOSFET passes potential carriers through n-type channel regions, creating a regulated flow of current. MOSFET transistors are characterized as enhancement type or depletion type devices, based on the nature of the channel. The AUIRLS3034 is a depletion type MOSFET, meaning that the channel is pinchable and the current can be regulated through switching on and off the channel.
The AUIRLS3034 has a few defining characteristics, including a low on-channel resistance, high blocking voltage, fast switching speed, minimal THD (total harmonic distortion) and high gain. It operates with very low voltage, usually between 0.9 to 1.8 V, as a result of its low temperature coefficient (VDS). Its low-temperature coefficient also enables the AUIRLS3034 to operate quickly with minimal noise.
These features lend the AUIRLS3034 an excellent range of possible applications, ranging from automotive to consumer products. It can be used to build a variety of different circuits, ranging from power converters, to analog and digital switching systems, to power management circuits. Additionally, the AUIRLS3034 is also well-suited for touch sensing, radio frequency communication and some medical instruments, due to its excellent signal transfer capabilities.
The AUIRLS3034 is also versatile in terms of its working principle. The device utilizes a V-MOSFET process, meaning that it is composed of two distinct layers of silicon, a source and a drain. A gate electrode placed between the two layers provides the voltage control for the FET. As the voltage applied to the gate increases, the number of carriers passing through the gate increases and the device is said to “conduct” electricity. If a reverse bias is applied to the gate, the switch is unable to operate, effectively providing a circuit or system with “ OFF ” state.
The AUIRLS3034 is used in a range of applications, from automotive to consumer products. Its low on-channel resistance, fast switching speed and minimal THD make it a popular choice for a variety of circuit designs. Its compatibility with low voltage and its V-MOSFET composition make it an attractive component for many projects. Overall, the AUIRLS3034 is a versatile and economical FET that offers many features and capabilities for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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