Allicdata Part #: | AUIRLS3036-7TRL-ND |
Manufacturer Part#: |
AUIRLS3036-7TRL |
Price: | $ 2.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 300A D2PAK-7P |
More Detail: | N-Channel 60V 240A (Tc) 380W (Tc) Surface Mount D2... |
DataSheet: | AUIRLS3036-7TRL Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 2.06114 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package: | D2PAK (7-Lead) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 380W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11270pF @ 50V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.9 mOhm @ 180A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 240A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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AURLS3036-7TRL is a field-effect power transistor engineered for power supply applications. This device operates as an enhancement-mode transistor and is often used in many other applications such as heating control systems, motor control systems, and ac/dc converters. The AURLS3036-7TRL device utilizes vertical trench construction and has an integrated protection diode to offer a high degree of dependability.
AURLS3036-7TRL has a single simple structure with a source as the gate, drain as the source, and the source as the collector. It is typically suited for switching operations with high drain-source currents up to 24A and a drain-source breakdown voltage up to 500V. It has high thermal stability, very low gate threshold voltage, and is constructed of a high-performance silicon substrate for enhanced current-carrying capability.
The working principle of AURLS3036-7TRL is quite simple. When a gate signal is applied to the device, it produces a gate-drain electric field which creates a transistor current flowing in the device. This current is usually proportional to the gate voltage and this is used to control the flow of drain source current. This process is used to switch the device on or off and hence the device tuning. By selecting the correct gate voltage, the drain-source current can be controlled accordingly.
AURLS3036-7TRL is also a robust device thanks to its high mechanical stability. It is well suited for applications in high-temperature, low-voltage environments. In such cases, this device will provide effective performance with minimal variation in the current rating that is necessary for controlling power levels. Furthermore, its low noise characteristics make it ideal for use in noisy environments offering significant reduction in total system noise. It is also compatible with low-voltage systems, making it ideal for using in a variety of applications.
In conclusion, AURLS3036-7TRL field effect transistor is highly reliable and suitable for various applications due to its low gate threshold voltage, high thermal stability, low-noise characteristics, and compatibility with low-voltage systems. It provides improved performance and dependability by offering a high degree of dependability and providing effective control over the power levels.
The specific data is subject to PDF, and the above content is for reference
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