Allicdata Part #: | AUIRLS4030-ND |
Manufacturer Part#: |
AUIRLS4030 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 180A D2PAK |
More Detail: | N-Channel 100V 180A (Tc) 370W (Tc) Surface Mount D... |
DataSheet: | AUIRLS4030 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 370W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11360pF @ 50V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 4.5V |
Series: | Automotive, AEC-Q101, HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.3 mOhm @ 110A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRLS4030 FETs (Field Effect Transistors) is an exceptionally versatile and reliable single-channel MOSFET (metal oxide semiconductor field-effect transistor) designed to provide high levels of switching and amplification. The device is extremely popular among industrial and domestic application fields due to its low power consumption and high performance. Additionally, its wide voltage range and simple pinning arrangement make it compatible with a variety of power sources and circuitry configurations.
The device has four terminals (named source, gate, drain, and PNP) that are interconnected and operate according to the operating principle of its construction. The gate (G) acts as the control for the whole device. By connecting a gate voltage to the gate, an electric field will be created between it and the source (S), either permitting or rejecting the flow of electrons from the source to the drain (D). The number of electrons will depend upon the magnitude of the gate voltage, which in turn is determined by the PNP connection.
The basic working principle of the AUIRLS4030 is that it is able to control the current flowing through it by controlling the resistance of the channel between the source and the drain. When the gate voltage is applied, electrons are attracted to the gate, increasing the conductivity of the channel; conversely, when the gate voltage is removed, electrons are repelled away from the gate, decreasing the conductivity of the channel. This is remarkably efficient, as the device has practically zero power consumption in its off-state, while consuming significantly less power than a traditional bipolar transistor when in use.
This basic design allows it to be used in multiple applications, such as analog and digital signal processing, filtering, and power regulation. The very nature of its construction enables it to quickly switch current on and off, as well as be used to amplify signals from low-voltage sources. It is also ideal for use in current sensing and current limiting applications, due to its ability to regulate the flow of current by varying the resistance of the channel.
The AUIRLS4030 is the perfect solution for many applications due to its versatility and low-voltage operation. Its simple configuration and wide voltage range makes it compatible with almost any power source, allowing it to be used as an amplifier, switch, or as part of a digital logic system. With its exceptional performance and longevity, the AUIRLS4030 is sure to be an invaluable part of any electronic circuit or system.
The specific data is subject to PDF, and the above content is for reference
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