Allicdata Part #: | AUIRLS8409-7P-ND |
Manufacturer Part#: |
AUIRLS8409-7P |
Price: | $ 4.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET NCH 40V 240A D2PAK |
More Detail: | N-Channel 40V 240A (Tc) 375W (Tc) Surface Mount D2... |
DataSheet: | AUIRLS8409-7P Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 3.89340 |
10 +: | $ 3.47697 |
100 +: | $ 2.85106 |
500 +: | $ 2.30865 |
1000 +: | $ 1.94705 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package: | D2PAK (7-Lead) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 16488pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 266nC @ 4.5V |
Series: | Automotive, AEC-Q101, HEXFET® |
Rds On (Max) @ Id, Vgs: | 0.75 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 240A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The AUIRLS8409-7P is a high-voltage N-channel power MOSFET that is available in a variety of packages, allowing it to be used in a wide range of applications. It has a drain source voltage rating of 800V and a drain current of 9.7A. This MOSFET is designed for use in high-power switch mode appliations such as HVAC, Motor Control, Load Switching, and Lighting.
The AUIRLS8409-7P is an advanced MOSFET technology designed for high-speed switching applications. It has an optimized gate charge and improved drain-source avalanche ratings that make it ideal for applications where fast switching of high current is required. The AUIRLS8409-7P has an integrated ESD protection that prevents it from being damaged by electrostatic discharges. It also has a low on-state resistance which reduces the power dissipation and increases efficiency.
The AUIRLS8409-7P has a working principle based on the field-effect transistor (FET) which allows a voltage to be applied to the gate of the transistor to control its conductivity. The applied voltage may either increase or decrease the conductivity of the MOSFET, depending on the type of FET. In the case of AUIRLS8409-7P, the MOSFET is an N-channel type, which means that the applied voltage will increase the conductivity. It also has an analog voltage control which allows for more precise adjustment of the drain current.
The AUIRLS8409-7P is ideal for applications that require high-speed switching of high current with low power dissipation. It can be used for HVAC, Motor Control, Load Switching, and Lighting. It is especially suited for high-power switch mode applications due to its optimized gate charge and improved drain-source avalanche ratings.
The specific data is subject to PDF, and the above content is for reference
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