BLF647P,112

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	1.3GHz
Gain:	18dB
Voltage - Test:	32V
Current Rating:	--
Noise Figure:	--
Current - Test:	100mA
Power - Output:	200W
Voltage - Rated:	65V
Package / Case:	SOT-1121A
Supplier Device Package:	LDMOST
Base Part Number:	BLF647

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The BLF647P,112 is a N-channel enhancement mode silicon gate FET designed for use in applications such as radio-frequency (RF) amplifiers and passive semiconductor switching devices. It offers a low barrier to operation and features good matching with its own voltage drain, good thermal stability and a wide range of performance parameters enabling it to be used in a variety of applications.The BLF647P,112 is an RF MOSFET, which is a type of field effect transistor (FET) that is primarily used to amplify and switch radio-frequency signals. It is an enhancement mode device, meaning that the channel conducts well even at low voltage, so it can be used as a linear amplifier. The BLF647P,112 also has low power requirements and low device dissipation, allowing it to be used in various high frequency, high power applications.The BLF647P,112\'s unique design brings together a high linearity and high voltage breakdown. due to its low gate to drain capacitance and high frequency response. The low gate to drain capacitance reduces the amount of power required for the device to operate, resulting in reduced power consumption.The BLF647P,112 is designed for use in applications that require a high frequency of operation up to 4GHz. This makes it ideal for use in applications that require low-noise operation and high power outputs. It can be used in a variety of circuits including amplifiers, switches, passive mixers, and power detectors.The working principle of the BLF647P,112 is based on the FET\'s Gate, Drain and Source pins. The Gate is used to control the voltage at the Drain pin. When the Gate voltage is greater than the drain voltage, the device is said to be in the "on" state and the Drain current flows. When the Gate voltage is lower than the Drain voltage, the device is in the "off" state and the Drain current does not flow. The Source voltage is used to provide the bias for the Gate and the Drain pins.The BLF647P,112 has a good input conductance and a high output power, meaning that it can be used in a variety of applications. It is well suited for use in a range of different circuits, such as amplifiers, mixers, power detectors and low noise amplifiers. It is also ideal for use as a switch in RF applications such as cellular phone systems, satellite receivers and Set Top Boxes (STBs).The BLF647P,112 is a reliable and robust device that can be used in a variety of RF applications. It offers improved signal reception and signal amplification while consuming less power than its rival devices. The device is relatively low cost and is highly efficient, allowing it to be used in various low cost applications. In addition, it is easy to use and is highly compatible with other circuitry.In conclusion, the BLF647P,112 is an ideal device for a variety of RF applications. Its low gate to drain capacitance and high frequency response ensure that it is both highly efficient and reliable. Its cost effectiveness and high power output make it an attractive choice for many applications. Furthermore, its ease of use, versatility, and compatibility with other circuitry make it a popular choice for many engineers and electronics professionals.

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