Allicdata Part #: | BLF6G20S-230PRN:11-ND |
Manufacturer Part#: |
BLF6G20S-230PRN:11 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANSISTOR PWR LDMOS SOT539B |
More Detail: | RF Mosfet LDMOS 28V 2A 1.8GHz ~ 1.88GHz 17.5dB 65W... |
DataSheet: | BLF6G20S-230PRN:11 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.8GHz ~ 1.88GHz |
Gain: | 17.5dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 2A |
Power - Output: | 65W |
Voltage - Rated: | 65V |
Package / Case: | SOT539B |
Supplier Device Package: | SOT539B |
Base Part Number: | BLF6G20 |
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BLF6G20S-230PRN:11 is a kind of transistor used in both commercial and industrial electronics. It belongs to the category of field-effect transistors (FETs), specifically of the radio frequency (RF) variety. It is suitable for use in a wide range of applications, including those with rugged environmental conditions, and it offers superior performance in terms of both the power efficiency and its power handling capabilities. These are some of the main reasons why more and more manufacturers have adopted this type of transistor in their designs.
The BLF6G20S-230PRN:11is a dual-gate N-channel MOSFET, suitable for use in a variety of power applications. It features a very low input capacitance, which allows it to operate at high frequencies while still retaining its good efficiency. It is also tolerant of high temperatures and comes with an excellent power range of up to 20 Watts in the class AB output stage. Additionally, its low on-resistance of only 150 milliOhms makes it highly efficient and able to handle a high power rating.
As far as the working principle of the BLF6G20S-230PRN:11 is concerned, it works on a basic transistor concept, where the current flows from the source to the drain through a conducting channel formed between the source and the drain. This conducting channel is produced by the application of a voltage. This voltage is known as the gate voltage and it is responsible for controlling the width of the conducting channel. This helps to regulate the current flowing and hence the speed of the device. In addition, the voltage across the drain and source is responsible for controlling the polarity of the transistor.
The BLF6G20S-230PRN:11 is mainly used in the linear amplifiers, oscillators and digital switching systems, which can operate in the frequency range of 50 MHz to 1 MHz. It is also popularly used in direct modulation systems, as well as in other mixed signal applications, digital receivers, power amplifiers and power supply applications. Its low input capacitance and on-resistance enable it to remain stable even in the presence of strong external noise or interference. It is also highly tolerant to temperature extremes and is suitable for rugged industrial and military applications.
Moreover, the BLF6G20S-230PRN:11 has excellent reliability and is suitable for use in harsh environmental conditions, such as those encountered in automobile, aerospace and military applications. Its low power consumption and high power handling capabilities also make it an ideal choice for a wide range of commercial and industrial applications.
All in all, the BLF6G20S-230PRN:11 is a highly reliable transistor that can deliver excellent performance in power and frequency applications, as well as in a number of automotive, aerospace and military applications. It has a low input capacitance and on-resistance, as well as a high drain-source voltage, which makes it highly reliable and suitable for use in tough environmental conditions. Moreover, its power handling capabilities make it an excellent choice for commercial and industrial applications, including those with rugged environments. As such, more and more manufacturers have adopted the BLF6G20S-230PRN:11 for their designs.
The specific data is subject to PDF, and the above content is for reference
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BLF6G27LS-40P,112 | Ampleon USA ... | 56.33 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G13LS-250P,112 | Ampleon USA ... | 142.84 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G10L-40BRN,112 | Ampleon USA ... | 35.75 $ | 1000 | RF FET LDMOS 65V 23DB SOT... |
BLF6G22LS-40P,112 | Ampleon USA ... | 43.38 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G38S-25,118 | Ampleon USA ... | 45.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
BLF6G27LS-40P,118 | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
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