Allicdata Part #: | 568-4280-5-ND |
Manufacturer Part#: |
BLF6G22LS-130,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 17DB SOT502B |
More Detail: | RF Mosfet LDMOS 28V 1.1A 2.11GHz ~ 2.17GHz 17dB 30... |
DataSheet: | BLF6G22LS-130,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.11GHz ~ 2.17GHz |
Gain: | 17dB |
Voltage - Test: | 28V |
Current Rating: | 34A |
Noise Figure: | -- |
Current - Test: | 1.1A |
Power - Output: | 30W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502B |
Supplier Device Package: | SOT502B |
Base Part Number: | BLF6G22 |
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BLF6G22LS-130,112 is an RF power MOSFET transistor that makes use of advanced high-voltage silicon processing and a fully isolated back gate structure. This transistor is suitable for use in applications such as broadband amplifiers, mobile and satellite communication, RF radio and TV transmitters, industrial and medical equipment, and wireless power supplies.
The BLF6G22LS-130,112 has excellent RF performance characteristics such as low noise figure, high gain, low thermal resistance, and high power dissipation. It also operates at a gate voltage from -5V to +5V. It has a drain to gate voltage of 130V, an ID rating of 112A, and a Pd of up to 210W at 25C.
The off-state breakdown voltage of the BLF6G22LS-130,112 is very impressive at 300V which is due to the full isolation structure. This structure also helps reduce internal capacitance and increase isolation between the drain and source terminals. Additionally, its power casing design helps to increase its durability and reliability.
The switching characteristics of the BLF6G22LS-130,112 are also excellent with a fast switching time of 16 ns and a low gate charge of 103 nC. This low gate charge helps keep power dissipation to a minimum and increases the efficiency of the device.
The working principle of the BLF6G22LS-130,112 is based on the MOSFET transistor. It consists of a gate, a source, and a drain terminals, which are insulated from each other by a thin layer of insulated material called the gate oxide. When the gate is charged, electrons flow from the source to the drain, creating a conductive path between the two.
The transistors’s operation is based on two main principles. The first is the field effect which occurs when a voltage difference is applied between the gate and the source. This causes an electric field to be formed which attracts electrons and creates a current flow between the source and the drain.
The second principle is Drain-Source conduction which occurs when the gate voltage is increased. This increases the number of electrons attracted to the gate, increasing the current flow between the source and the drain.
The BLF6G22LS-130,112 is a very useful RF power MOSFET transistor for a variety of applications. Its wide range of features, such as its low gate charge, high drain to gate voltage, low thermal resistance, and high drain to source voltage make it ideal for use in many high-power applications.
The specific data is subject to PDF, and the above content is for reference
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BLF6G13LS-250PGJ | Ampleon USA ... | 134.62 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
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BLF6G38-10G,112 | Ampleon USA ... | 23.7 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G22LS-40P,118 | Ampleon USA ... | 40.19 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF644PU | Ampleon USA ... | 103.4 $ | 57 | RF FET LDMOS 65V 23.5DB S... |
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BLF6G38S-25,112 | Ampleon USA ... | 53.28 $ | 56 | RF FET LDMOS 65V 15DB SOT... |
BLF6G38LS-50,118 | Ampleon USA ... | 56.11 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38LS-50,112 | Ampleon USA ... | 65.39 $ | 85 | RF FET LDMOS 65V 14DB SOT... |
BLF6G21-10G,135 | Ampleon USA ... | 19.62 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF6G21-10G,112 | Ampleon USA ... | 26.4 $ | 604 | RF FET LDMOS 65V 18.5DB S... |
BLF647P,112 | Ampleon USA ... | 149.83 $ | 2 | RF FET LDMOS 65V 18DB SOT... |
BLF6G27LS-40P,112 | Ampleon USA ... | 56.33 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G13LS-250P,112 | Ampleon USA ... | 142.84 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G10L-40BRN,112 | Ampleon USA ... | 35.75 $ | 1000 | RF FET LDMOS 65V 23DB SOT... |
BLF6G22LS-40P,112 | Ampleon USA ... | 43.38 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G38S-25,118 | Ampleon USA ... | 45.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
BLF6G27LS-40P,118 | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27LS-40PGJ | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27L-50BN,118 | Ampleon USA ... | 50.17 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
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