BLF6G21-10G,112

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BLF6G21-10G is a power amplifier from NXP semiconductor. Being able to work up to 3.2GHz, it is known for its low noise figure, high gain, high linearity and excellent efficiency. As an RF transistor, BLF6G21-10G is mainly used for applications such as cellular infrastructures, remote radio units, base stations, amplifiers and antenna systems.The BLF6G21-10G is a LDMOS device fabricated in 0.25 μm (um) pHEMT technology. It is packaged in SOT-89 SMD package. The peak power output of BLF6G21-10G is 10W with gain of 19 dB at 50V supply voltage. It is suitable for applications operating at frequencies ranging from 500 MHz to 3.2 GHz with negligible gain variation over the band. The device can also be used in applications requiring gains up to 11 dB at 100 MHz to 3 GHz.

Working principle of the BLF6G21-10G can be divided into four parts:

DeviceOperation. The BLF6G21-10G is a N-channel matched LDMOS device, operatingin an N-Region. The flow of current in the device is due to the combination of apunch-through of the field oxide and the injection of carriers through the channelbarriers due to the electric field generated by the applied voltage. When avoltage is applied across the device, electrons are accelerated by the electricfield and hence, reach the drain faster, leading to a current flow.

Gain Characteristics. The BLF6G21-10G device has a good gaincharacteristic from 500 MHz to 3.2 GHz. The Gain has its maximum valueat around 3.2 GHz, where lower band gain is about 17 dB, and higher band gainis about 19 dB. The gain remains almost constant over the entire range for VDS< 90V. The gain is also independent of the temperature.

NoiseFigure. The BLF6G21-10G transistor offers good noise figure performance over thefrequency range 500 MHz to 3.2 GHz, with a minimum value approaching 2 dB. Thismakes it suitable for use in high power applications with low power consumingnoise sources.

InputImpedance. The input impedances of the device are very important in applicationsthat require high gain with low power dissipation. The input impedances of theBLF6G21-10G transistor are very high at around 50 ohms. This makes the devicehighly suitable for use in devices that need to deliver high power with lowpower dissipations.

In conclusion, the BLF6G21-10G transistor is a high performance, low noise, high gain RF transistor from NXP semiconductor. It is suitable for applications in cellular infrastructures, remote radio units, base stations, amplifiers and antenna systems. Its peak power output is 10W with gain of 19 dB at 50V supply. The BLF6G21-10G is an ideal solution for RF applications in the frequency range from 500 MHz to 3.2 GHz.

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