BLF6G15L-40BRN,118 Allicdata Electronics
Allicdata Part #:

BLF6G15L-40BRN,118-ND

Manufacturer Part#:

BLF6G15L-40BRN,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 22DB SOT1112A
More Detail: RF Mosfet LDMOS (Dual), Common Source 28V 330mA 1....
DataSheet: BLF6G15L-40BRN,118 datasheetBLF6G15L-40BRN,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS (Dual), Common Source
Frequency: 1.47GHz ~ 1.51GHz
Gain: 22dB
Voltage - Test: 28V
Current Rating: 11A
Noise Figure: --
Current - Test: 330mA
Power - Output: 2.5W
Voltage - Rated: 65V
Package / Case: SOT-1112A
Supplier Device Package: CDFM6
Base Part Number: BLF6G15
Description

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A BLF6G15L-40BRN,118 is a Radio Frequency (RF) Field Effect Transistor (FET) that is commonly used in many modern applications. This type of transistors is ideal for a wide range of applications, from radio frequency communications to automated control systems. They are also used in a variety of industrial and consumer electronic products.

The BLF6G15L-40BRN,118 is a N-Channel Enhancement Mode RF FET, meaning that it switches from an “OFF” state to an “ON” state when a voltage is applied. This type of transistor is used in a wide range of applications including radio receivers, audio amplifiers, mobile communications, satellite communications, and wireless systems. It is also commonly used in a variety of consumer electronics such as television receivers, gaming systems, and home entertainment systems.

The BLF6G15L-40BRN,118 is a type of power transistor. This means that it is capable of switching high amounts of current while still operating at high frequency and voltage levels. This type of transistor is quite efficient and is capable of operating at very high frequencies. This makes it ideal for applications such as mobile communications, satellite communications, and wireless systems.

The BLF6G15L-40BRN,118 is also quite robust and is capable of withstanding large amounts of temperature and humidity. This makes it ideal for use in harsh and difficult environments, where it is necessary for the transistor to be able to withstand temperature and humidity extremes. The BLF6G15L-40BRN,118 is also quite resistant to shock and vibration, making it a perfect choice for military and aerospace applications.

The working principle of this type of transistor is relatively straightforward. The transistor is composed of four terminals: the source, gate, drain, and substrate. The source and drain are the two conducting elements of the transistor, and the gate is used to control the current that flows between the source and drain.

When a voltage is applied to the gate, an electric field is created. This electric field creates a channel into the substrate, which allows electrons to flow in both directions. The resulting current is controlled by the gate voltage and is used to transfer power between the source and drain.

The BLF6G15L-40BRN,118 is a high-frequency linear power transistor. This means that it is capable of operating at frequencies of up to 5 GHz while also providing smooth linear operation. This also makes it ideal for a wide range of applications, from radio communication to automated control systems.

Due to its robust construction, high-frequency capabilities, and efficient power transfer, the BLF6G15L-40BRN,118 is an excellent choice for a variety of applications. It is used in numerous types of products, such as televisions, receivers, gaming systems, satellite communications, and wireless systems. It is also used in industrial and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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