BLF871,112 Allicdata Electronics
Allicdata Part #:

568-4737-ND

Manufacturer Part#:

BLF871,112

Price: $ 91.19
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 89V 19DB SOT467C
More Detail: RF Mosfet LDMOS 40V 500mA 860MHz 19dB 100W SOT467C
DataSheet: BLF871,112 datasheetBLF871,112 Datasheet/PDF
Quantity: 281
1 +: $ 82.89540
10 +: $ 78.97330
Stock 281Can Ship Immediately
$ 91.19
Specifications
Series: --
Packaging: Tray 
Part Status: Last Time Buy
Transistor Type: LDMOS
Frequency: 860MHz
Gain: 19dB
Voltage - Test: 40V
Current Rating: --
Noise Figure: --
Current - Test: 500mA
Power - Output: 100W
Voltage - Rated: 89V
Package / Case: SOT467C
Supplier Device Package: SOT467C
Description

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The BLF871,112 is an RF power field effect transistor (FET). FETs have been used in the radio frequencies since their development, allowing for increased power levels that require less input power. This transistor is a later product of the FET and MOSFET forms of transistors, allowing for increased power and efficiency. As such, the BLF871,112 is an RF device and can be used in radio frequency and power amplifiers, thereby allowing for significant increases in power output.

The BLF871,112 is manufactured by DynaLap and is capable of up to 4W output power for operations up to 700 MHz. The device is made in a metal–oxide–silicon (MOS) process and has a maximum drain-sourceON resistance of 0.65 ohms. With a maximum operating voltage of 50V and a maximum drain current of 5A, this transistor is suitable for many applications.

The working principle of this device is the same as any other FET and MOSFET. A voltage is applied to the gate, which then creates a field between the source and the drain. This field modulates the drain-source current, and as the current varies, so does the power output. The BLF871,112 has an excellent gain at high frequencies and is suitable for creating amplifiers and other diverse RF circuits in which the desired output requires more power than can be achieved from a single device.

As the capabilities of FETs continue to improve, so does their application range. The BLF871,112 can be used for a variety of applications, including for high-power radio transmitters, high-power amplifiers, and high-power microwave ovens. This device can also be used in applications such as power supplies and many different types of RF circuit designs.

The BLF871,112 is an RF power field effect transistor that provides excellent gain and maximum power levels at high frequencies. This device is ideal for high-power radio transmitters, high-power amplifiers, power supplies and various types of RF circuit designs. Its working principle is the same as any other FET and MOSFET, which relies on the applied voltage to create an electric field between the source and the drain. By varying the current, the power output can be altered. This device is manufactured by DynaLap, and its capabilities make it suitable for a vast range of applications.

The specific data is subject to PDF, and the above content is for reference

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