BLF8G24LS-200P,118 Allicdata Electronics
Allicdata Part #:

BLF8G24LS-200P,118-ND

Manufacturer Part#:

BLF8G24LS-200P,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 17.2DB SOT539B
More Detail: RF Mosfet LDMOS (Dual), Common Source 28V 1.74A 2....
DataSheet: BLF8G24LS-200P,118 datasheetBLF8G24LS-200P,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS (Dual), Common Source
Frequency: 2.3GHz ~ 2.4GHz
Gain: 17.2dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 1.74A
Power - Output: 60W
Voltage - Rated: 65V
Package / Case: SOT539B
Supplier Device Package: SOT539B
Base Part Number: BLF8G24
Description

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BLF8G24LS-200P is a RF MOSFET transistor which belongs to the family of transistors that are used in radio frequency (RF) applications. This type of transistor has some unique characteristics that make it suitable for use in radios, wireless sensors, and many other wireless communications applications.

Application fields

BLF8G24LS-200P transistors are used in a wide range of applications such as radio transmitters and receivers, amplifiers, modulators, mixers and other circuit components. These transistors can also be used to amplify signals in astronomical instruments, radar systems, and communication systems. The transistor is also used in high frequency circuit power supplies and ultra-high frequency applications. RF MOSFET transistors are also used to produce high frequency microwave signals. Other applications include digital logic circuit switching and low noise control amplifiers.

Working principle

The BLF8G24LS-200P is a RF MOSFET transistor which uses metal-oxide-semiconductor field effect technology, making it suitable for use in high frequency circuits. It consists of four terminals known as the source, gate, drain and body, as well as a substrate. It also has a gate insulation layer between the gate and the substrate. The transistor works by allowing a voltage to be applied to the gate which produces an electric field. This electric field allows current to flow from the source to the drain. The amount of current that can flow through the transistor can be controlled by the corresponding gate voltage.

The unique working principle of RF MOSFET transistors makes them ideal for use in high frequency circuits where fast switching is required. The transistor also provides excellent gain and noise performance when used in RF circuits. In addition, the transistor is reliable and can operate over a wide temperature range with minimal distortion.

The BLF8G24LS-200P transistor is a high frequency transistor, making it suitable for use in applications such as wireless communication and television systems. The transistor is also suitable for use in a wide range of other applications and is popular among engineers. The transistor is easy to use and is a reliable and robust component when used in circuit design.

The specific data is subject to PDF, and the above content is for reference

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