| Allicdata Part #: | 568-7553-5-ND |
| Manufacturer Part#: |
BLF881S,112 |
| Price: | $ 72.11 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Ampleon USA Inc. |
| Short Description: | RF FET LDMOS 104V 21DB SOT467B |
| More Detail: | RF Mosfet LDMOS 50V 500mA 860MHz 21dB 140W LDMOST |
| DataSheet: | BLF881S,112 Datasheet/PDF |
| Quantity: | 52 |
| 1 +: | $ 65.55780 |
| 10 +: | $ 62.17530 |
| 100 +: | $ 56.25410 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Transistor Type: | LDMOS |
| Frequency: | 860MHz |
| Gain: | 21dB |
| Voltage - Test: | 50V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 500mA |
| Power - Output: | 140W |
| Voltage - Rated: | 104V |
| Package / Case: | SOT467B |
| Supplier Device Package: | LDMOST |
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The BLF881S,112 is a type of transistor that is part of a larger family of transistors known as FETs, MOSFETs, and RF transistors. This specific type of transistor has a wide array of applications and is used in many different areas such as radio, television, and telecommunication. The BLF881S,112 offers a good signal-to-noise ratio, a low gate charge, a low input capacitance, and a low on-resistance ratio. Additionally, this type of transistor is also very versatile and has the ability to be used in more complex circuits.
The basic working principle of the BLF881S,112 transistor relies on the majority carriers. The majority carriers are simply electrons and holes (positive and negative electrical charges, respectively). These two charges are then used to create an inversion layer in which they can move freely through the transistor. This inversion layer has a negative or positive gate voltage which controls the size of the charge carriers. When the gate voltage is small, the size of the charge carriers is small and when the gate voltage is large, the size of the carriers is large.
The functionality of the BLF881S,112 transistor is based on the way it works with the majority charge carriers. This type of transistor utilizes a gate voltage to control the size of the charge carriers which creates an inversion layer in which they can freely move through the device. In this way, the BLF881S,112 transistor makes use of the majority carrier principle which is how itworks.
The BLF881S,112 has many different applications in the field of radio, television, and telecommunication. This type of transistor is often used in the field of Radio Frequency (RF) circuits, which are circuits that can transmit and receive information through the airwaves. This type of transistor is also used in circuits that are designed to receive digital signals from satellite phones, television receivers, and other digital devices. Additionally, the BLF881S,112 is used in a variety of mobile communication devices, such as cellular phones and Walkie-Talkies. The BLF881S,112 is also found in some Automobile electronics, as part of the audio systems.
The BLF881S,112 also has a number of applications in the communications field. This type of transistor is ideal for use in radio receivers and transmitters, as it is capable of providing a strong signal with a low noise level. Additionally, the BLF881S,112 is also used in the development of communication networks, such as those used in cellular phones, laptops, and other digital devices. Finally, the BLF881S,112 is often used in the development of satellite communication systems as well.
The BLF881S,112 is a type of transistor that is used in a wide array of fields and applications. Its functionality is based on the majority carrier principle, which makes use of the gate voltage to control the size of the majority charge carriers. This type of transistor is ideal for use in radio, television, and telecommunication applications, as well as mobile communication, automobile electronics, and communications networks. The BLF881S,112 is an important part of many different applications and is often used in the development of various digital devices and communication systems.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| BLF871,112 | Ampleon USA ... | 91.19 $ | 281 | RF FET LDMOS 89V 19DB SOT... |
| BLF8G09LS-400PGWJ | Ampleon USA ... | 51.72 $ | 1000 | RF FET LDMOS 65V 20.6DB S... |
| BLF879PS,112 | Ampleon USA ... | 120.15 $ | 55 | RF FET LDMOS 104V 21DB SO... |
| BLF820 | TE Connectiv... | 0.0 $ | 1000 | FILTER LC 2UH/820PF SMDLC... |
| BLF8G10LS-270GV,12 | Ampleon USA ... | 53.33 $ | 96 | RF FET LDMOS 65V 19.5DB S... |
| BLF8G22LS-200V,112 | Ampleon USA ... | 53.05 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
| BLF8G20LS-400PVJ | Ampleon USA ... | 51.72 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
| BLF8G22LS-220J | Ampleon USA ... | 49.34 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
| BLF8G24LS-200P,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 17.2DB S... |
| BLF8G20LS-140VJ | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
| BLF879PSIN | Ampleon USA ... | 0.0 $ | 1000 | RF FETRF Mosfet |
| BLF871S,112 | Ampleon USA ... | 91.19 $ | 17 | RF FET LDMOS 89V 19DB SOT... |
| BLF881S,112 | Ampleon USA ... | 72.11 $ | 52 | RF FET LDMOS 104V 21DB SO... |
| BLF8G27LS-140,112 | Ampleon USA ... | 53.33 $ | 40 | RF FET LDMOS 65V 17.4DB S... |
| BLF8G20LS-400PVU | Ampleon USA ... | 60.28 $ | 105 | RF FET LDMOS 65V 19DB SOT... |
| BLF8G20LS-160VJ | Ampleon USA ... | 42.34 $ | 1000 | RF FET LDMOS 65V 20DB SOT... |
| BLF8G20LS-400PGVQ | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 19DB SOT... |
| BLF8G22LS-240U | Ampleon USA ... | 61.87 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
| BLF8G22LS-270J | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 17.7DB S... |
| BLF8G24LS-100VU | Ampleon USA ... | 45.7 $ | 60 | RF FET LDMOS 65V 18DB SOT... |
| BLF8G20LS-400PVQ | NXP USA Inc | 0.0 $ | 1000 | TRANS RF 400W LDMOS CDFM8... |
| BLF8G22LS-200GV,12 | Ampleon USA ... | 53.05 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
| BLF8G09LS-270GWJ | Ampleon USA ... | 49.34 $ | 1000 | RF FET LDMOS 65V 20DB SOT... |
| BLF8G09LS-270WU | Ampleon USA ... | 53.05 $ | 1000 | RF FET LDMOS 65V 20DB SOT... |
| BLF878,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 89V 21DB SOT... |
| BLF8G22LS-140U | Ampleon USA ... | 44.75 $ | 49 | RF FET LDMOS 65V 18.5DB S... |
| BLF8G27LS-150VJ | Ampleon USA ... | 45.67 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
| BLF8G24LS-200P,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 17.2DB S... |
| BLF8G27LS-150GVQ | Ampleon USA ... | 53.33 $ | 94 | RF FET LDMOS 65V 18DB SOT... |
| BLF8G27LS-140V,112 | Ampleon USA ... | 53.33 $ | 1000 | RF FET LDMOS 65V 17.4DB S... |
| BLF8G22LS-240J | Ampleon USA ... | 57.55 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
| BLF8G22L-160BV,118 | NXP USA Inc | 0.0 $ | 1000 | TRANSISTOR CDFM6RF Mosfet... |
| BLF8G22LS-310AVU | NXP USA Inc | 0.0 $ | 1000 | IC TRANS LDMOS 140W ACC-8... |
| BLF898U | Ampleon USA ... | 216.71 $ | 1000 | RF MOSFET LDMOS 50V SOT53... |
| BLF888ESU | Ampleon USA ... | 190.11 $ | 44 | RF FET LDMOS 104V 17DB SO... |
| BLF8G24L-200P,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 17.2DB S... |
| BLF8G10LS-300PJ | Ampleon USA ... | 77.42 $ | 100 | RF FET LDMOS 65V 20.5DB S... |
| BLF8G22LS-160BV,11 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
| BLF8G09LS-400PWJ | Ampleon USA ... | 51.72 $ | 1000 | RF FET LDMOS 65V 20.6DB S... |
| BLF8G24LS-200PNU | Ampleon USA ... | 61.87 $ | 1000 | RF FET LDMOS 65V 17.2DB S... |
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BLF881S,112 Datasheet/PDF