BLF8G10LS-270GV,12 Allicdata Electronics
Allicdata Part #:

1603-1169-ND

Manufacturer Part#:

BLF8G10LS-270GV,12

Price: $ 53.33
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 19.5DB SOT1244C
More Detail: RF Mosfet LDMOS 28V 2A 871.5MHz ~ 891.5MHz 19.5dB ...
DataSheet: BLF8G10LS-270GV,12 datasheetBLF8G10LS-270GV,12 Datasheet/PDF
Quantity: 96
1 +: $ 48.48480
10 +: $ 46.06120
100 +: $ 41.51550
Stock 96Can Ship Immediately
$ 53.33
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: LDMOS
Frequency: 871.5MHz ~ 891.5MHz
Gain: 19.5dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 2A
Power - Output: 67W
Voltage - Rated: 65V
Package / Case: SOT-1244C
Supplier Device Package: CDFM6
Base Part Number: BLF8G10
Description

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The BLF8G10LS-270GV,12 transistor is a type of field-effect transistor (FET) used in radio frequency (RF) communication systems. It is a device that amplifies weak signals in order to improve sensitivity and reduce distortion. The BLF8G10LS-270GV,12 transistor is commonly used in a variety of applications such as radio frequency (RF) amplifiers, low-noise amplifiers, and power amplifiers.The working principle of the BLF8G10LS-270GV,12 transistor is quite simple. It consists of two semiconductor devices, an N-channel and a P-channel. These transistors use an electric field to control current between the source and drain terminals. When a positive voltage is applied to the gate terminal, current will flow between the source and drain terminals. This allows the amplifier to begin the amplification process. The BLF8G10LS-270GV,12 transistor is designed for use in radio-frequency applications. It is a type of power FET that is suitable for a wide range of applications including low noise amplifiers and RF power amplifiers. It can be used in various parts of a radio-frequency communication system such as in the receive and transmit sections. Additionally, the BLF8G10LS-270GV,12 transistor is also ideal for use in high-frequency power converters and high-frequency switching circuits.This type of transistor can reach high frequency levels with low noise, making it ideal for use in radio-frequency amplifiers and switching applications. The strong insulation of the drain-to-source junctions prevents any interference, even at high radio frequencies. The low input capacitance and high transconductance of the BLF8G10LS-270GV,12 make it suitable for high speed circuits as well.In addition, the BLF8G10LS-270GV,12 also features excellent thermal resistance, allowing it to remain stable in high-temperature environments. Its high power dissipation is another notable feature as it allows for efficient power handling in demanding applications. Overall, the BLF8G10LS-270GV,12 is an ideal choice for radio-frequency applications. Its ability to handle high frequencies with low distortion, combined with its thermal and power handling capabilities, make it suitable for a number of radio-frequency applications. The device can help improve sensitivity and reduce distortion in a variety of radio-frequency communication systems.

The specific data is subject to PDF, and the above content is for reference

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