BLF878,112

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLF878,112 is a type of Field-Effect Transistor (FET) found in many diverse applications. The FETs belong to the group of switching technology, which mainly consists of two categories: uni-polar and bi-polar switches. In terms of the types of transistors found within the FET family, the most common is the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).

The BLF878,112 is a type of MOSFET that is specifically found within the category of Radio Frequency (RF) applications. Like many other FETs, it allows for transistor-like features with an added dimension of improved performance. It is capable of handling an extended voltage range, high switching speeds, and low noise levels. While being primarily found within the RF category, the BLF878,112 is used across many different application areas. It can be found in devices used in computer networks, industrial applications, and audio devices.

The working principle of the BLF878,112 is based on the same principle as all other FETs. It uses an electric field to control the current that is able to pass through it. When there is either no or a low gate voltage applied to the FET, there is practically no current that passes through it. This means that the FET is “off”. When a higher voltage is applied to the gate of the FET, the electric field that is created restricts the current that passes through it, thereby controlling the amount of

current. As the voltage increases, so does the amount of current that passes through the FET. This is the basic working principle of all FETs, including the BLF878,112.

Whereas the basic operation of all FETs is the same, it is the more advanced features and design parameters that differentiate them from each other. In the case of the BLF878,112, it features high voltage ratings of up to 30V with a Continuous Drain Current (Id) rating of 1.7A. Its Maximum Drain-Source On-Resistance (Rdson) is rated up to 4.5 W, and its switching speed is remarkable due to its high bandwidth of up to 400 MHz. With such features, it is highly suited to RF applications where it can provide excellent performance while still being cost-effective.

The BLF878,112 is one of the most popular FETs used in RF applications due to its combination of performance and cost. Its highly rated continuous drain current, low on-resistance, and remarkable switching speed make this transistor an ideal fit for RF applications. Its versatility and reliability are also features that make it perfect for a wide variety of applications, such as computer networks, industrial equipment, and audio devices.

The specific data is subject to PDF, and the above content is for reference